Controlling Resistance Switching Polarities of Epitaxial BaTiO<sub>3</sub> Films by Mediation of Ferroelectricity and Oxygen Vacancies

Li, Ming; Zhou, Jian; Jing, Xiaosai; Zeng, Min; Wu, Sujuan; Gao, Jinwei; Zhang, Zhang; Gao, Xingsen; Lu, Xubing; Liu, J.-M.; Alexe, Marin

doi:10.1002/aelm.201500069

Cited by 67 publications

(72 citation statements)

References 32 publications

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“…Therefore, this indicates that the ferroelectric state is preserved in BTO even when charge/ion movement occurs in the second switching process. This is consistent with previous experimental reports and calculations that ferroelectricity is robust in the presence of defects. In contrast, the Pt/STO/NSTO behaves differently in the G – V curve as shown in Figure d, which shows a symmetrical G – V behavior around V = 0 in the low voltage regime (−0.1 V < V < 0.1 V).…”

supporting

confidence: 94%

“…Polarization driven OVM across BTO/LSMO interface was found to be critical in resistive switching in Au/BTO (2.8 nm)/LSMO . Li et al demonstrated that unipolar RS can be switched to bipolar RS in Au/BTO (300 nm)/LSMO device by changing the relative dominance of oxygen vacancy and ferroelectricity in BTO layer. More recently, Hu et al pointed out that oxygen vacancies drifting under intense electric field induces the asymmetry of RV loops and enhances the TER ratio in Sm doped BiFeO 3 FTJ devices.…”

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confidence: 99%

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Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Lü

Zheng

et al. 2017

Advanced Materials

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Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO FTJ by comparing BaTiO with SrTiO based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO switching voltage, showing OVM being its origin. BaTiO based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.

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confidence: 94%

mentioning

confidence: 99%

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Lü

Zheng

et al. 2017

Advanced Materials

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“…In ferroelectric tunnel junctions, electric‐field biasing allows modifying the polarization state of the ferroelectric, giving rise to distinguishable resistance states of the tunnel barrier, not only useful for memory applications but also for logic operations . It was reported that not only purely electronic mechanism (polarization reversal) but also ionic motions can contribute to the RS states of ferroelectric tunnel junctions . Anyhow, if ferroelectric memory elements are used in crossbar geometry, current sneak and leakage bottlenecks persist.…”

Section: Introductionmentioning

confidence: 99%

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions

Qian

Fina

Sánchez

et al. 2019

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devices can be scaled down as required by the most aggressive scaling in electronic industry. This is an important advantage compared with electronic memory devices based on electric charge storage. [1][2][3] In fact, the resistive random access memory (RRAM) elements are intensively investigated on the path toward higher memory density and enhanced computing performance, as demanded by present and future information technologies. The socalled passive crossbar array of RS devices constitutes the backbone of RRAMs and reconfigurable logics, and holds promises to become central in the quest for merging logic and memory functions or neuromorphic computing. [4][5][6][7] The crossbar array consists of an array of parallel bottom metallic electrodes and a perpendicular array of top metallic electrodes (so called, word and bit lines) that sandwich at each crossing point, the RS element. By applying suitable voltage at the specified word and bit lines, the state of an RS element is set to LRS (ON) or HRS (OFF). Inherent to this array configuration is that the bottom electrode connects all elements in a row and the top electrode connects all elements in a column. It thus follows that: i) if several elements are in LRS state, when current is used to probe the state of a particular element, charge will leak across all LRS elements (sneak current) thus compromising the reading and ii) the presence of LRS states implies a permanent current leakage and a concomitant Joule dissipation. These intrinsic bottlenecks of crossbar arrays are well recognized and several approaches, such as integration of strongly rectifying elements, [8] were proposed to overcome this drawback. In 2010, Linn et al. [9] proposed a simple solution to solve the sneak problem: connect two RS devices in anti-serial configuration in such a way that if one is in LRS state the other is in the HRS state (so-called complementary resistive switching, CRS). In these circumstances, information is stored not in the state of a single RS element but in the state of distinguishable coupled pair: LRS+HRS and HRS+LRS, representing different logic states ("0" and "1"). Of relevance is that the resulting coupled state is always in a HRS at remanence and thus the sneak and leakage currents are reduced.This novel approach was successfully demonstrated using a variety of materials and RS mechanisms. For instance, it was demonstrated in Pt/SiO 2 /GeSe/Cu [9] and in all-oxides RRAMs. [10][11][12][13][14][15][16] In this approach, data reading is achieved by Complementary resistive switching (CRS) devices are receiving attention because they can potentially solve the current-sneak and current-leakage problems of memory arrays based on resistive switching (RS) elements. It is shown here that a simple anti-serial connection of two ferroelectric tunnel junctions, based on BaTiO 3 , with symmetric top metallic electrodes and a common, floating bottom nanometric film electrode, constitute a CRS memory element. It allows nonvolatile storage of binary states ("1" = "HRS+LRS" and "0" =...

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“…As a rule, higher oxygen pressure in the film deposition process leads to a lower oxygen vacancy concentration and better ferroelectricity in the ferroelectric films. For example, BaTiO 3 (BTO) films with various oxygen vacancy concentrations on the (La,Sr)MnO 3 (LSMO) electrode can be obtained by carefully controlling the deposition oxygen pressure . When the oxygen vacancy concentration is high, the BTO films show weak ferroelectricity, and the BTO/LSMO heterostructures show that the cycle of resistive switching from the LRS to the HRS is clockwise.…”

Section: Approaches To Improve Rs Propertiesmentioning

confidence: 99%

Resistive Switching Behavior in Ferroelectric Heterostructures

Wang

Bai

2019

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Resistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.

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Controlling Resistance Switching Polarities of Epitaxial BaTiO₃ Films by Mediation of Ferroelectricity and Oxygen Vacancies

Cited by 67 publications

References 32 publications

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions

Resistive Switching Behavior in Ferroelectric Heterostructures

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Controlling Resistance Switching Polarities of Epitaxial BaTiO3 Films by Mediation of Ferroelectricity and Oxygen Vacancies

Cited by 67 publications

References 32 publications

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions

Resistive Switching Behavior in Ferroelectric Heterostructures

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Controlling Resistance Switching Polarities of Epitaxial BaTiO₃ Films by Mediation of Ferroelectricity and Oxygen Vacancies