Controlling preferred orientation and electrical conductivity of zinc oxide thin films by post growth annealing treatment

Kennedy, J.; Murmu, Peter P.; Leveneur, Jérôme; Markwitz, A.; Futter, J.

doi:10.1016/j.apsusc.2016.01.160

Cited by 240 publications

(44 citation statements)

References 55 publications

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“…This result clearly indicates a significant decrease in the amount of oxygen vacancies in the LS SnO 2 NPs. The decrease of oxygen vacancies in the LS sample may have been induced from heating in the air atmosphere, and similar results were also found for ZnO [ 18 , 19 ]. The Sn binding energy peaks in the LS sample appeared at 486.4 eV and 494.8 eV, and were assigned as the Sn 3d 5/2 and Sn 3d 3/2 peaks of SnO 2 , respectively, as shown in Figure 4 c [ 20 ].…”

Section: Resultssupporting

confidence: 74%

Influence of Surface Defects and Size on Photochemical Properties of SnO2 Nanoparticles

2018

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We report the successful synthesis of surface defective small size (SS) SnO2 nanoparticles (NPs) by adopting a low temperature surfactant free solution method. The structural properties of the NPs were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). The presence of surface defects, especially oxygen vacancies, in the sample were characterized using micro-Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and photoluminescence emission. The Brunauer–Emmet–Teller (BET) nitrogen adsorption–desorption isotherms demonstrated the superior textural properties (high surface area and uniform pore size) of SS SnO2 compared to large size (LS) SnO2. A comparable study was drawn between SS SnO2 and LS SnO2 NPs and a significant decrease in the concentration of surface defects was observed for the LS sample. The results showed that surface defects significantly depend upon the size of the NPs. The surface defects formed within the band gap energy level of SnO2 significantly participated in the recombination process of photogenerated charge carriers, improving photochemical properties. Moreover, the SS SnO2 showed superior photoelectrochemical (PEC) and photocatalytic activities compared to the LS SnO2. The presence of a comparatively large number of surface defects due to its high surface area may enhance the photochemical activity by reducing the recombination rate of the photogenerated charges.

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Section: Resultssupporting

confidence: 74%

Influence of Surface Defects and Size on Photochemical Properties of SnO2 Nanoparticles

2018

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“…The optical band gap of hematite-type film has been experimentally determined using Tauc's formula (see Fig. 4) [49]:…”

Section: Optical Properties Of the Feox Filmsmentioning

confidence: 99%

Synthesis of iron oxide films by reactive magnetron sputtering assisted by plasma emission monitoring

Aubry

Liu

Dekens

et al. 2019

Materials Chemistry and Physics

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Iron oxide films were synthesized by pulsed-DC magnetron sputtering from a metallic target in Ar and O2 gas mixtures. Plasma emission monitoring was implemented to accurately control the metalto-oxygen ratio in the coating through the chemical state of the iron target. The intensity of the Fe* emission line was maintained at a given value (setpoint) in regulating the introduced oxygen flow rate. In addition, the oxidation rate of the growing film was adjusted by controlling the oxidationto-deposition rate ratio as a function of the position of the substrates relative to the magnetron axis.The iron oxide films were characterized by X-ray diffraction, UV-VIS spectrophotometry, electrical measurement and vibrating sample magnetometry. In addition to the crystallization of 2 pure hematite and magnetite phases, both phases coexist in a transition domain for a short range of setpoint depending on the oxidation-to-deposition rate ratio. The electrical, optical and magnetic behaviors of the FeOx films suggest that the relative proportion of phases can be tailored in this range. The FeOx film behaviors can then be tuned from the hematite semi-conductor properties to the semi-metallic magnetite properties.

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“…of the works on II-VI group were focused on ZnO, ZnS, CdSe and CdS [9]. A few reports based on the ZnSe one-dimensional (1D) nanosized structures such as nanowires, nanorods, nanobelts and nanotubes have been published on the basis of their novel properties and widely potential applications [10].…”

Section: Introductionmentioning

confidence: 99%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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Substrate temperature dependent optical and structural properties of Zinc selenide (ZnSe) thin films were studied. Films were grown onto glass substrate by electron beam evaporation technique in high vacuum (10-6 Torr) at various temperatures in range of room temperature (RT) to 300 °C. Microstrain and dislocation density were also found to vary between 0.69×10 -3 , 1.12×10 -3 , 3.59×1010 cm -2 and 9.49×1010 cm -2 . The lattice parameter value 'a' for these films was calculated and found to increase from 5.577 Å to 5.652 Å respectively. Scanning electron micrographs (SEM) showed that clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of the film. This confirmed the mixture comprised cubic and hexagonal phases. A comparison of atomic force microscopy (AFM) images showed that the grain size increased from about 139 nm for the RT deposited ZnSe film to about 39 nm for the ZnSe film deposited at 300 °C. The binding energy of 54.4 eV is similar to the values obtained for other selenides. The Auger parameter for zinc was calculated from the experimental binding energies of the zinc (2p 3/2 ) XPS line and the LMM Auger line the reference values are 1042.49 eV -1020.19 eV for zinc. All the films were characterized optically by UV-vis-NIR spectrophotometer in photon wavelength range (300 nm -2000 nm). The optical transmittance and reflectance were utilized to compute the absorption coefficient, refractive index and band gap energy of the films. The bandgap value of RT and 100 oC deposited ZnSe films are 2.88 eV and 2.78 eV, which are found to be blue shifted by about 0.08 -0.18 eV from the bandgap value of 2.70 eV for the standard bulk material.

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Controlling preferred orientation and electrical conductivity of zinc oxide thin films by post growth annealing treatment

Cited by 240 publications

References 55 publications

Influence of Surface Defects and Size on Photochemical Properties of SnO2 Nanoparticles

Influence of Surface Defects and Size on Photochemical Properties of SnO2 Nanoparticles

Synthesis of iron oxide films by reactive magnetron sputtering assisted by plasma emission monitoring

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

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