Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents

KIKUCHI, J.; Akiyoshi, S; Terada, Hiroshi; Nozaki, Yukio; Matsuyama, K.

doi:10.1016/j.jmmm.2003.12.771

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…In the lowresistance state the magnetizations are parallel, and in the high- resistance state the magnetizations are antiparallel, followed by a further low-resistance state where parallel alignment is once again obtained as the field is now sufficiently strong to have reversed the magnetization in the hard as well as in the soft layer. The largest value of GMR we achieved was 1.7% at room temperature, which is slightly larger than that of similar structures (1%) [14].…”

Section: Resultscontrasting

confidence: 62%

Fabrication and magnetotransport properties of ordered sub-100 nm pseudo-spin-valve element arrays

Wang¹,

Wu²,

Wang³

et al. 2006

Nanotechnology

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We prepared ordered sub-100 nm pseudo-spin-valve (PSV) element arrays by electrodeposition of NiFe/Cu/Co into the pores of self-organized nanoporous anodized aluminium templates. Field-emission scanning electron microscopy reveals that the sub-100 nm PSV arrays, of uniform size, are well separated and exhibit a perfect two-dimensional array with a hexagonal pattern. The easy-axis hysteresis loops show two distinct steps related to the separate reversal of soft (NiFe) and hard (Co) layers. The switching fields of the PSV arrays are approximately -50 Oe for the NiFe and 570 Oe for the Co. The dependence of the magnetoresistance on the Cu spacer layer thickness indicates the presence of an oscillatory interlayer exchange coupling through the Cu layers.

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