Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiN_xO_y/TiN

Abstract

Controlling the copper (Cu) filament using an optimized porous iridium (Ir) interfacial layer thickness ranging from 2 to 20 nm in a Cu/Ir/TiNxOy/TiN resistive switching memory device is investigated for the first time. Transmission electron microscopy (TEM) shows a porous Ir layer, and X‐ray photoelectron spectroscopy (XPS) is performed to determine the Ir0, Ir3+/Ir4+ oxidation states, which are responsible for a super‐Nernstian pH sensitivity of 125.5 mV pH−1 as well as a low concentration of 1 × 10−12m tributyrin detected using a 40 nm thick Ir in Ir/TiNxOy/TiN structure. The 5 nm thick Ir layer in the Cu/Ir/TiNxOy/TiN structure shows current–voltage switching characteristics for 3000 consecutive cycles, a stable RESET voltage, a long program/erase (P/E) endurance of >109 cycles under a P/E current of 300 µA at a high speed of 100 ns, and neuromorphic phenomena compared to those of other Ir thicknesses. Cu migration into the TiNxOy oxide‐electrolyte is shown by TEM observations. The tributyrin detection ranging from 1 × 10−12 to 100 × 10−12m using a resistive switching memory device paves the way for the early diagnosis of human diseases as well as artificial intelligence applications in the near future.

Stable Metallic Enrichment in Conductive Filaments in TaOx‐Based Resistive Switches Arising from Competing Diffusive Fluxes

“…Many reports have addressed the fabrication and electrical testing of resistive switching devices. Comparatively fewer studies used techniques such as TEM or X‐ray spectromicroscopy in order to image the filament to differentiate between existing models. Imaging studies face several challenges.…”

Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiNx‐Based Resistive Random Access Memory

“…Many excellent results have been obtained. Some RRAMs with stable resistance property based on various materials, such as high‐k HfO 2 , TaO 2 , and TiO 2 , have been reported . At present, RRAM is widely accepted as a strong candidate for the next generation of memory due to its advantages of simple structure, good compressibility, fast read–write speed, and compatibility with complementary metal oxide semiconductor (CMOS) technology .…”

A Study on the Interfacial Structure Design of Self‐Compliance Ni/HfOx/Ni Bipolar Selectors and Trap‐to‐Trap Tunneling Mechanism Caused by Redox Reaction

“…The conducting filament is able to generate switching behavior, but not volatile selective behavior, because the filament in the MIM device should remain after canceling the applied electric field, especially in inert electrode devices . Although the interface‐type switching mechanism may affect the self‐compliance selector, it is not sufficient to explain the mechanism of self‐compliance selectors . This indicates that there is another mechanism of our self‐compliance selector.…”

“…[29] Although the interfacetype switching mechanism may affect the self-compliance selector, it is not sufficient to explain the mechanism of self-compliance selectors. [30,31] This indicates that there is another mechanism of our self-compliance selector. It is the www.advancedsciencenews.com www.pss-a.com annealing process and voltage application that lead to the oxygen enrichment in the BE [7] and transformed part of the Ni next to the HfO x layer into NiO y , leading to the abnormal oxygen element migration.…”