Controlled Vapor-Liquid-Solid Growth of Silicon Crystals

Wagner, Ricarda; Doherty, Chris

doi:10.1149/1.2423810

Cited by 62 publications

(35 citation statements)

References 3 publications

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“…1). This result is in contrast to those in previous words, in which the nanowire became thicker as the growth temperature increased [24,25]. One possible explanation is that the growth of GaN nanowires occurs in a diffusion-induced mode.…”

Section: Resultscontrasting

confidence: 97%

Effect of temperature on GaN nanowires fabricated via thermal heating of GaN powders

et al. 2010

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GaN nanowires have been successfully synthesized by heating GaN powders under flowing ammonia gas in a temperature range of 950-1050°C. The nanowire morphology was changed with varying temperature, and higher temperature favored thinner nanowires. The growth mechanisms of GaN nanowires at 950°C included a vapor-liquid-solid process. The photoluminescence (PL) spectra of the samples commonly exhibited violet to yellow emission, whereas red emission occurred preferentially in samples synthesized at lower temperature. We have discussed the possible mechanisms by which growth temperature affected the nanowire morphology and PL spectrum.

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Section: Resultscontrasting

confidence: 97%

Effect of temperature on GaN nanowires fabricated via thermal heating of GaN powders

et al. 2010

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“…9,13,15,23,27,28 This section of our study analyzes the effects of the partial pressure of germane, on the epitaxy of germanium nanowires on silicon substrates. In order to clearly understand the interdependencies of the partial pressure of germane on epitaxial nanowire growth, experiments were conducted with partial pressures of 0.275, 0.44, 0.7, and 1.8 Torr.…”

Section: Effect Of Partial Pressurementioning

confidence: 99%

Nature of germanium nanowire heteroepitaxy on silicon substrates

Jagannathan

Deal

Nishi

et al. 2006

Journal of Applied Physics

116

114

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Systematic studies of the heteroepitaxial growth of germanium nanowires on silicon substrates were performed. These studies included the effect of sample preparation, substrate orientation, preanneal, growth temperature, and germane partial pressure on the growth of epitaxial germanium nanowires. Scanning electron microscopy and transmission electron microscopy were used to analyze the resulting nanowire growth. Germanium nanowires grew predominantly along the ⟨111⟩ crystallographic direction, with a minority of wires growing along the ⟨110⟩ direction, irrespective of the underlying silicon substrate orientation [silicon (111), (110), and (100)]. Decreasing the partial pressure of germane increased the number of ⟨111⟩ nanowires normal to the silicon (111) surface, compared to the other three available ⟨111⟩ directions. The growth rate of nanowires increased with the partial pressure of germane and to a lesser degree with temperature. The nucleation density of nanowire growth and the degree of epitaxy both increased with temperature. However, increasing the growth temperature also increased the rate of sidewall deposition, thereby resulting in tapered nanowires. A two-step temperature process was used to initiate nanowire nucleation and epitaxy at a high temperature, followed by nontapered nanowire growth at a lower temperature. Preannealing gold films in hydrogen or argon before nanowire growth reduced the yield of nanowires grown on silicon samples, especially on silicon (111) substrates, but not on silicon oxide. Gold annealing studies performed to investigate this preanneal effect showed greater gold agglomeration on the silicon samples compared to silicon oxide. The results and conclusions obtained from these studies give a better understanding of the complex interdependencies of the parameters involved in the controlled heteroepitaxial growth of vapor-liquid-solid grown germanium nanowires.

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“…The vertical NW growth is correspondingly reproduced after the complicated kink formation (Fig. 2(c)) [19,21]. It should be also noted that the axial NW growth rate in each growth segment ðDv ¼ Dl=tÞ is progressively reduced, as in Fig.…”

Section: Resultsmentioning

confidence: 75%