Controlled Vapor−Liquid−Solid Growth of Indium, Gallium, and Tin Oxide Nanowires via Chemical Vapor Transport

Johnson, Manuel; Aloni, Shaul; McCready, David E.; Bourret-Courchesne, Edith

doi:10.1021/cg050524g

Cited by 53 publications

(31 citation statements)

References 27 publications

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“…Our results in this study were also consistent with the previous reports. However the [0 0 1] growth direction in the vapor synthesis of ␤-Ga 2 O 3 nanowires would be the most common one [22,23] since [0 0 1] crystal plane is the most energetic in monoclinic configuration which is an irregular hexagonal one. The diversity of growth directions of 1D ␤-Ga 2 O 3 nanostructures might imply the complexity in the controllable preparation process of 1D monoclinic Ga 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

Low-temperature vapor synthesis of 1D β-Ga2O3 nanostructures on Si substrate by inert salt-assisted route

Zheng

et al. 2012

Materials Science and Engineering: B

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Section: Resultsmentioning

confidence: 99%

Low-temperature vapor synthesis of 1D β-Ga2O3 nanostructures on Si substrate by inert salt-assisted route

Zheng

et al. 2012

Materials Science and Engineering: B

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“…The fabrication techniques of homogeneous 1-D nanostructures have pursued the control over shape, aspect ratio, and crystalline arrangement to a considerable degree (11)(12)(13)(14)(15), and the improvement of the synthesis methods (16)(17)(18) has recently achieved the direct integration of functional nanostructures into nanodevices (19)(20)(21). So far, indium tin oxide (ITO) thin films are widely used, (14,16,17) whereas one-dimensional (1-D) nanostructures have been shown through a large volume of investigations to have slightly different morphology-related optical and electrical properties (18,19). There have been reports on the successful synthesis of ITO nanostructures with promising properties by the physical vapor transport methods.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of an antireflective, conductive, graded index ITO nanowire layer

O’Dwyer¹,

Torres²

2013

Front. Physics

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Nanoporous and nanostructured films, assemblies and arrangements are important from an applied point of view in microelectronics, photonics and optical materials. The ability to minimize reflection, control light output and use contrast and variation of the refractive index to modify photonic characteristics can provide routes to enhanced photonic crystal devices, omnidirectional reflectors, antireflection coatings and broadband absorbing materials. This work shows how multiscale branching of defect-free ITO NWs grown as a layer with a graded refractive index improves antireflection properties and shifts the transparency window into the near-infrared (NIR). The measurements confirm the structural quality and growth mechanism of the NW layer without any heterogeneous seeding for NW growth. Optical reflectance measurements confirm broadband antireflection (reflection <5%) between 1.3 and 1.6 μm which is tunable with the NW density. The work also outlines how the suppression of the Burstein-Moss shifts using refractive index variation allows transparency in a conductive NW layer into NIR range.

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“…They are known as multifunctional materials because they have, usually, more than one property increased for some special application [1][2][3][4]. Up to now, a great effort has been done by researches to achieve multifunctional nanocomposites of polymeric matrices filled with metallic, ceramic or inorganic phase, and in this work we studied the influence of conductive ITO (Indium Tin Oxide) nanowires on the electrical and the optical properties of Polymethyl methacrylate (PMMA) polymer [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Study ITO@PMMA Composites by Transmission Electron Microscopy

Arlindo

Orlandi

2011

MRS Proc.

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ITO nanowires were synthesized by carbothermal reduction process, using a co-evaporation method, and have controlled size, shape, and chemical composition. The electrical measurements of nanowires showed they have a resistance of about 10 2 Ω. In order to produce nanocomposites films, nanowires were dispersed in toluene using an ultrasonic cleaner, so the PMMA polymer was added, and the system was kept under agitation up to obtain a clear suspension. The PMMA polymer was filled with 1, 2, 5 and 10 % in weight of nanowires, and the films were done by tape casting. The results showed that the electrical resistance of nanocomposites changed by over 7 orders of magnitude by increasing the amount of filler, and using 5 wt% of filler the composite resistance decreased from 10 10 Ω to about 10 4 Ω, which means that percolation threshold of wires occurred at this concentration. This is an interesting result once for nanocomposites filled with ITO nanoparticles is necessary about 18% in weight to obtain percolation. The addition of filler up to 10 wt% decreased the resistance of the composite to 10 3 Ω, which is a value close to the resistance of wires. The composites were also analyzed by transmission electron microscopy (TEM), and the TEM results are in agreement with the electrical ones about percolation of nanowires. These results are promising once indicates that is possible to produce conductive and transparent in the visible range films by the addition of ITO nanowires in a polymeric matrix using a simple route.

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Controlled Vapor−Liquid−Solid Growth of Indium, Gallium, and Tin Oxide Nanowires via Chemical Vapor Transport

Cited by 53 publications

References 27 publications

Low-temperature vapor synthesis of 1D β-Ga2O3 nanostructures on Si substrate by inert salt-assisted route

Low-temperature vapor synthesis of 1D β-Ga2O3 nanostructures on Si substrate by inert salt-assisted route

Epitaxial growth of an antireflective, conductive, graded index ITO nanowire layer

Study ITO@PMMA Composites by Transmission Electron Microscopy

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