Epitaxial growth of an antireflective, conductive, graded index ITO nanowire layer

O’Dwyer, Colm; Torres, C. M. Sotomayor

doi:10.3389/fphy.2013.00018

Cited by 10 publications

(13 citation statements)

References 39 publications

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“…2 In its porous form GaN is particularly interesting for developing optoelectronic devices with improved efficiency, such as LEDs with enhanced light extraction efficiency. This is due to the multiple reflections on the lateral walls of the pores and an "effective" reduced refractive index 3,4 that alleviates the high refraction index contrast between GaN, and other semiconductors, and air. 5,6 They are also interesting for their use in (bio)sensors, with improved sensitivity induced by the larger surface area of its porous structures.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

et al. 2014

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LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been developed using porous semiconductors. Here, the growth of porous GaN epitaxial layers oriented along the [0001] crystallographic direction on Al 2 O 3 , SiC, AlN and GaN substrates is demonstrated. A lattice mismatch between the substrate and the porous GaN layer directly affects the structure and porosity of the porous GaN layer on each substrate. Deposition of unintentionally doped n-type porous GaN on non-porous p-type GaN layers allows for the fabrication of high quality rectifying p-n junctions, with potential applications in high brightness unencapsulated GaN-based light emitting diodes and high surface area wide band gap sensor devices.

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

et al. 2014

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“…Способ создания градиентного покрытия из материала оксида индия и олова с использованием многократного осаждения материала под разными углами при наклонном падении описывается в [8]. В работе [31] авторы также наблюдали подавление френелевского отражения с помощью схожих с рассматриваемыми в настоящей работе по своей структуре градиентных покрытий, полученных методом молекулярно-лучевой эпитаксии.…”

Section: результаты эксперимента и их обсуждениеunclassified

Исследование Профиля Эффективного Показателя Преломления В Самоорганизующихся Наноструктурированных Пленках ITO

Markov¹,

Павлюченко²,

Smirnova³

et al. 2018

Физика И Техника Полупроводников

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The optical characteristics and structural features of self-assembling nanostructured indium–tin oxide (ITO) films deposited onto substrates heated above 400°C are studied. Estimations of the distribution profiles of the material and effective refractive index in the films under study are obtained by computer simulation of a medium having spectral dependences of light transmission and reflection coefficients closest to those observed in the experiment. These results are in good agreement with scanning electron microscopy data for these films and make it possible to not only confirm the gradient character of such coatings but also restore some of its features. The further overgrowth of voids in self-assembling nanostructured films by means of the deposition of an additional material amount by magnetron sputtering at room temperature leads to a variation in the effective refractive index profile in them. Thus, it is possible to form transparent conductive films with an efficient refractive index profile adjusted for specific tasks. Adjustment of the refractive index profile in self-assembled ITO films acquires a special value for designing coatings with specified properties by virtue of a limited set of transparent conductive materials.

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“…There is a large drive in research to move away from Indium‐based TCO materials and instead examine more affordable and abundant materials such as Titanium, Molybdenum, Zinc and Gallium that are not identified as critical raw materials (CRM's). ITO remains the industry standard due to its well‐documented deposition and device characteristics but advancements are being made with other materials . Realistically, indium and other metal recovery is being made possible through green chemical routes.…”

Section: Thin Film Applications and Devicesmentioning

confidence: 99%

Solution Processable Metal Oxide Thin Film Deposition and Material Growth for Electronic and Photonic Devices

Glynn

O’Dwyer

2016

Adv Materials Inter

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A comprehensive review of recent advances in solution processing and growth of metal‐oxide thin films for electronic and photonic devices is presented, with specific focus on precise solution‐based technological coatings for electronics and optics, and new concepts for oxide material growth for electrochemical, catalytic, energy storage and conversion systems, information technology, semiconductor device processing and related devices. Throughout, the nature of the soluble precursors solutions and their relationship to film formation process by various solution coating techniques are collated and compared, highlighting advantages in precursor design for creating complex oxides for devices. Because of the versatility of solution‐processable oxides and functional material coating, it is important to capture the advances made in oxide deposition for plastic electronics, see‐through and wearable devices, and high‐fidelity thin film transistors on curved or flexible displays. Solution processing, even for oxides, allows control over composition, thickness, optical constants, porosity, doping, tunable optical absorbance/transmission, band structure engineering, 3D‐substrate coating, complex composite oxide formation and multi‐layered oxide systems that are more difficult to achieve using chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes. We also discuss limitations of solution processing for some technologies and comment on the future of solution‐based processing of metal‐oxide materials for electronics, photonics and other technologies.

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Epitaxial growth of an antireflective, conductive, graded index ITO nanowire layer

Cited by 10 publications

References 39 publications

Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

Исследование Профиля Эффективного Показателя Преломления В Самоорганизующихся Наноструктурированных Пленках ITO

Solution Processable Metal Oxide Thin Film Deposition and Material Growth for Electronic and Photonic Devices

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