Controlled surface charging as a depth-profiling probe for mesoscopic layers

Doron-Mor, Ilanit; Hatzor, Anat; Vaskevich, Alexander; Boom-Moav, ‡ Tamar van der; Shanzer, Abraham; Rubinstein, Israel; Cohen, Hagai

doi:10.1038/35019025

Cited by 146 publications

(165 citation statements)

References 14 publications

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“…The base pressure in the analysis chamber was kept below 10 −9 Torr. CSC 23,24 was used in order to differentiate between sample domains, as well as to eliminate signals originated from the underlying adhesive tape (see SI). The CSC data further provides information on the electrical properties of the resolved domains.…”

Section: Xps Measurementsmentioning

confidence: 99%

Protective molecular passivation of black phosphorus

et al. 2017

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Black phosphorus is a fascinating layered material, with extraordinary anisotropic mechanical, optical and electronic properties. However, the sensitivity of black phosphorus to oxygen and moisture poses significant challenges for technological applications of this unique material. Here, we report a viable solution that overcomes degradation of few-layer black phosphorus by passivating the surface with self-assembled monolayers of octadecyltrichlorosilane that provide long-term stability in ambient conditions. Importantly, we show that this treatment does not cause any undesired carrier doping of the bulk channel material, thanks to the emergent hierarchical interface structure. Our approach is compatible with conventional electronic materials processing technologies thus providing an immediate route toward practical applications in black phosphorus devices.

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Section: Xps Measurementsmentioning

confidence: 99%

Protective molecular passivation of black phosphorus

et al. 2017

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“…Elegant use of surface charging for lateral differentiation of mesoscopic layers and for depth profiling in 1-10 nm thin layers have recently been reported. 31,32 In most of these studies, surface charging was controlled/varied via a low energy electron flood gun. In a recent report, Havercroft and Sherwood 33 demonstrated that simple external biasing of the sample holder by a d.c. power supply can also be used to induce differential surface charging.…”

Section: Introductionmentioning

confidence: 99%

XPS Studies of SiO₂/Si System under External Bias

2003

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Thermally grown SiO 2 layers on Si (100) substrate have been subjected to different external voltage bias during XPS analysis to induce changes in the measured binding energy difference between Si 4+ and Si 0 in Si2p and Si KLL regions. The Si2p binding energy difference increases from 3.2 to 4.8 for samples containing 1-7 nm oxide thickness, and furthermore, this difference can be influenced by application of an external bias to the sample. Application of negative d.c. bias increases the binding energy difference, whereas positive bias decreases it. The voltage dependence of the binding energy difference exhibits a sigmoid character with an abrupt change near 0 V. Both the binding energy difference and differential change between the positive and negative bias have similar functional dependence on the thickness. This is attributed to differential charging between the silicon oxide layer and silicon substrate, which is decreased when a positive bias is applied to the sample (and therefore attracting a larger proportion of the stray electrons from the vacuum chamber to partially neutralize the oxide). Similarly, when negative bias is applied, the stray electrons are repelled from the sample resulting in less neutralization and an increased differential charging. Through external biasing, it is determined that charging in the SiO 2 /Si system persists all of the way down to 1 nm. Application of a.c. (square-wave) bias is equivalent to simultaneous application of negative and positive bias together. However, the differential change in the binding energy difference in the positive and negative cycle is frequency dependent and approaches to the d.c. results at lower frequencies.

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“…This negative charging, dubbed as controlled surface charging, has been utilized for deriving some chemical/physical parameters of surface structures. [3][4][5][6] Otherwise, the emphasis, until now, has mostly been on recording the line positions in XPS, and except for very few cases, [7][8][9][10][11] no attempts for electrical measurements have been made. The total current is the sum of two opposing currents, resulting from photoelectrons, and secondary electrons going out of the sample, and stray electrons or electrons from the flood gun, going into the sample, which can easily be controlled by application of a small ͑0-10 V͒ external bias, as we have reported recently.…”

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X-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structures

Ertaş

Demirok

Atalar³

et al. 2005

Applied Physics Letters

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Cataloged from PDF version of article.In x-ray photoemission measurements, differential charging causes the measured binding energy difference between the Si 2p of the oxide and the silicon substrate to vary nonlinearly as a function of the applied external do voltage stress, which controls the low-energy electrons going into and out of the sample. This nonlinear variation is similar to the system where a gold metal strip is connected to the same voltage stress through an external 10 Mohm series resistor and determined again by x-ray photoelectron spectroscopy (XPS). We utilize this functional resemblance to determine the resistance of the 4 nm SiO2 layer on a silicon substrate as 8 Mohm. In addition, by performing time-dependent XPS measurements (achieved by pulsing the voltage stress), we determine the time constant for charging/discharging of the same system as 2.0 s. Using an equivalent circuit, consisting of a gold metal strip connected through a 10 Mohm series resistor and a 56 nF parallel capacitor, and performing time-dependent XPS measurements, we also determine the time constant as 0.50 s in agreement with the expected value (0.56 s). Using this time constant and the resistance (8.0 Mohm), we can determined the capacitance of the 4 nm SiO2 layer as 250 nF in excellent agreement with the calculated value. Hence, by application of external do and pulsed voltage stresses, an x-ray photoelectron spectrometer is turned into a tool for extracting electrical parameters of surface structures in a noncontact fashion. (c) 2005 American Institute of Physics

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Controlled surface charging as a depth-profiling probe for mesoscopic layers

Cited by 146 publications

References 14 publications

Protective molecular passivation of black phosphorus

Protective molecular passivation of black phosphorus

XPS Studies of SiO₂/Si System under External Bias

X-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structures

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Controlled surface charging as a depth-profiling probe for mesoscopic layers

Cited by 146 publications

References 14 publications

Protective molecular passivation of black phosphorus

Protective molecular passivation of black phosphorus

XPS Studies of SiO2/Si System under External Bias

X-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structures

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Product

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XPS Studies of SiO₂/Si System under External Bias