Controlled Nonvolatile Transition in Polyoxometalates‐Graphene Oxide Hybrid Memristive Devices

Abstract

Graphene oxide (GO)‐based nonvolatile memory has triggered tremendous interest owing to its high mechanical flexibility, high optical transparency, low cost fabrication, and environmental friendly manufacture for future flexible and transparent electronic devices. Although various data storage types with different switching mechanisms have been demonstrated, challenges still exist in controlling of the memory performances. Here, polyoxometalates (POMs), a type of molecular oxide cluster, is coassembled into the GO‐based memory through electrostatic layer‐by‐layer deposition approach. Assisted by the catalytic activity of POMs, the GO can be reduced to reduced graphene oxide (RGO) under UV irradiation. By this catalytic photoreduction reaction, two types of memory characteristics can be obtained including the write‐once‐read‐many‐times (WORM) derived from the GO‐based memory and the rewritable bipolar resistive switching arising from the RGO‐based counterpart. It was verified that the transition between the WORM and bipolar resistive switching is associated with the modulation of the interface barrier of POM and GO junction. Furthermore, charge trapping/detrapping process is proposed to account for the mechanism of the two memory types. This work offers valuable insight into the new design of tunable memory characteristics and emphasizes the significant role of POMs in modifying the interface features.

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

“…2D materials, for example, graphene, [ 82 ] MoS 2 , [ 83 ] h‐BN, [ 84 ] WS 2 , [ 85 ] and black phosphorus, [ 86 ] have been explored for RS devices. Graphene is the most studied as well as the first to be studied.…”

The Intrinsic Charge Carrier Behaviors and Applications of Polyoxometalate Clusters Based Materials

“…[65][66][67] For example, due to the high catalytic activity of H 3 PW 12 O 40 cluster to reduce graphene oxides (GO) under UV irradiation, there are two kinds of memory characteristics that could be obtained with distinct charge trapping/detrapping processes. [68] A write-onceread-many-times (WORM) behavior could be observed in the GO-based memory devices while a rewritable bipolar resistive switching induced by the rGO could also be achieved. Besides, the transition between these two memory characteristics of the WORM and bipolar resistive switching can be verified by the association with the tuning of the interface barrier between the H 3 PW 12 O 40 clusters and the GO junction.…”

Photonic Memristor for Future Computing: A Perspective

“…[36] Han et al demonstrated a phototunable memristor based on ITO/phosphotungstic acid (PW)/graphene oxide (GO)/Al structure. [73] PW can act as a multifunctional catalyzer to reduce GO under UV irradiation and induce the transition of memory types from WORM to bipolar RS. The irreversible transformation in RS behavior is due to the discrepancy in the energy level between GO and rGO, as well as the decreased interface energy barrier in the PW/rGO junction.…”