2002
DOI: 10.1002/1521-3927(20020701)23:10/11<612::aid-marc612>3.0.co;2-9
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Controlled Growth of PMMA Brushes on Silicon Surfaces at Room Temperature

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Cited by 107 publications
(127 citation statements)
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“…As shown in Fig. 1, the layer thickness of polyDMAEMA (filled circles) brushes increases steadily with reaction time until about 10 h. Such a loss of linearity has previously been linked to the loss of active chain ends or a reduced rate of monomer diffusion [32].…”
Section: Impact Of Polyquaternary Ammonium Chain Length On Efficacy Omentioning
confidence: 65%
See 1 more Smart Citation
“…As shown in Fig. 1, the layer thickness of polyDMAEMA (filled circles) brushes increases steadily with reaction time until about 10 h. Such a loss of linearity has previously been linked to the loss of active chain ends or a reduced rate of monomer diffusion [32].…”
Section: Impact Of Polyquaternary Ammonium Chain Length On Efficacy Omentioning
confidence: 65%
“…The chain length of polymers synthesized by ATRP as a function of reaction time for surface-initiated reactions at constant initiator density has been studied in depth [25,[30][31][32][33][34][35]. As shown in Fig.…”
Section: Impact Of Polyquaternary Ammonium Chain Length On Efficacy Omentioning
confidence: 99%
“…For the poly(benzyl-n-methacrylate-b-styrene) (p(BnMA-b-S)) brushes PBnMA was the attached block (Scheme 2). The PMMA and PBnMA macroinitiators were synthesized from a covalently attached 2-bromoisobutyrate initiator monolayer on the surface of a silicon wafer (Schemes 1 and 2) [48,49]. The initiator monolayer was formed under inert conditions at room temperature, using triethyl amine as a catalyst, toluene as solvent and a monochlorosilane group as the anchoring moiety.…”
Section: The Concept Of Using a Polymer Brush To Move Nanoobjectsmentioning
confidence: 99%
“…To prepare the homogeneous monolayer of the initiator on the silicon wafers, monochlorosilane, 3-(2-bromoisobutyryl)-decil dimethylchlorosilane (BrC10DMCS), was synthesized as previously described [7]. Silicon wafers with 10 nm of SiO 2 layer were cut into 1.0 cm x 2.0 cm, rinsed by sonication with hexane, ethanol and acetone, and then etched with oxygen plasma treatment (300 W, 10 min).…”
Section: Surface Preparation 221 Immobilization Of Initiator On Silmentioning
confidence: 99%