Controlled Growth of Ordered Nanopore Arrays in GaN

Wildeson, Isaac H.; Ewoldt, David A.; Colby, Robert; Stach, Eric A.; Sands, Timothy D.

doi:10.1021/nl103418q

Cited by 10 publications

(7 citation statements)

References 35 publications

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“…22 There are plenty of methods for manufacturing porous IIInitride materials. Dry etching methods are widely used and include reactive ion etching 23,24 and hydrogen etching. 25 However, dry etching treatment may cause a few unintended damages to samples.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

et al. 2022

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Section: Introductionmentioning

confidence: 99%

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

et al. 2022

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“…More importantly, the resulting nanowire-to-electrode or nanowire-to-nanowire connections are inherently random and inconsistent. Porous electrodes may also be formed by using electron beam (e-beam) lithography [15] or focused-ion-beam (FIB) milling [16], but the serial and time-intensive nature of such processes preclude them from being used in large-area or large-batch applications.…”

Section: Introductionmentioning

confidence: 99%

Periodically porous top electrodes on vertical nanowire arrays for highly sensitive gas detection

Field

Pehrsson

2011

Nanotechnology

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Nanowires of various materials and configurations have been shown to be highly effective in the detection of chemical and biological species. In this paper, we report a novel, nanosphere-enabled approach to fabricating highly sensitive gas sensors based on ordered arrays of vertically aligned silicon nanowires topped with a periodically porous top electrode. The vertical array configuration helps to greatly increase the sensitivity of the sensor while the pores in the top electrode layer significantly improve sensing response times by allowing analyte gases to pass through freely. Herein, we show highly sensitive detection to both nitrogen dioxide (NO(2)) and ammonia (NH(3)) in humidified air. NO(2) detection down to 10 parts per billion (ppb) is demonstrated and an order-of-magnitude improvement in sensor response time is shown in the detection of NH(3).

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“…The interaction of FIB with the GaN surface is a complex process which requires a separate in-depth study. The nucleation of ZnO from the trenches milled by FIB is affected by dissociation of the surface nitrogen atoms on the GaN surface [8], amorphization of the GaN surface [40], implantation of Ga [41], and the localization of the nucleation to the interface of GaN with the resist [42]. The configurations of both plain and patterned interfaces should be carefully considered to answer the question why the rectifying I-V characteristics are observed only on the patterned substrates.…”

Section: The Impact Of Fib On the Nucleation Of Zno Nanorods And On Tmentioning

confidence: 99%

Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

et al. 2020

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We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

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Controlled Growth of Ordered Nanopore Arrays in GaN

Cited by 10 publications

References 35 publications

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Periodically porous top electrodes on vertical nanowire arrays for highly sensitive gas detection

Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

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