Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Tiagulskyi, Stanislav; Yatskiv, Roman; Faitová, Hana; Kučerová, Šárka; Roesel, David; Vaniš, J.; Grym, Jan; Veselý, Jozef

doi:10.3390/nano10030508

Cited by 8 publications

(7 citation statements)

References 50 publications

(73 reference statements)

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“…Thin silver wire, glued by conductive silver paste, provided the ohmic contact to the silicon substrate. The bias voltage was applied between the needle and the grounded substrate [44,45]. The current-voltage characteristics were measured for the two different types of nanowires with different shapes and polarities.…”

Section: Ebic and Nano-probe Resultsmentioning

confidence: 99%

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Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

et al. 2020

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For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures.

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Section: Ebic and Nano-probe Resultsmentioning

confidence: 99%

“…bias voltage was applied between the needle and the grounded substrate [44,45]. The current-voltage characteristics were measured for the two different types of nanowires with different shapes and polarities.…”

Section: Ebic and Nano-probe Resultsmentioning

confidence: 99%

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

et al. 2020

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“…In a recent study, a reduction in native defects at the surface is reported for ZnO nanoparticles annealed at various temperatures [15]. Similarly, significant improvements in ideality factor, rectification ratio, and reverse breakdown voltage are observed in ZnO/Si heterojunctions annealed in Nitrogen (N 2 ) atmosphere [10], [16]. Furthermore, better rectification is achieved for ZnO Schottky diode with seed layer pre-annealed in N 2 [17].…”

Section: Introductionmentioning

confidence: 88%

Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

Faraz

Jafri

Tajvar

et al. 2021

ELEKTRON ELEKTROTECH

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The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.

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“…ZnO thin films (seed layers) can be patterned using a variety of techniques such as atomic layer deposition (ALD), 30 laser interference lithography, 31−33 self-assembly technology, 34 nanoimprinting, 35,36 ion beam etching, 37 and electron beam lithography (EBL). 38,39 The resist used in these methods mainly serves as a mask during the formation of the seed layer and growth of the NRs.…”

Section: Introductionmentioning

confidence: 99%

“…ZnO thin films (seed layers) can be patterned using a variety of techniques such as atomic layer deposition (ALD), laser interference lithography, − self-assembly technology, nanoimprinting, , ion beam etching, and electron beam lithography (EBL). , The resist used in these methods mainly serves as a mask during the formation of the seed layer and growth of the NRs. , Urgessa et al used poly(methyl methacrylate) (PMMA) resist as a mask to grow ZnO NRs in patterns created by EBL . NRs that are grown this way have a uniform morphology; however, the indirect growth mode has limited the NR density and increased the costs and complexity of the process.…”

Section: Introductionmentioning

confidence: 99%

Growth of Vertical ZnO Nanorods from Patterned Films via Decomposition of Zinc Acetate by Focused Ion Beam: Implication for UV Detection

Yang,

Meng,

Liu

et al. 2023

ACS Appl. Nano Mater.

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Zinc oxide (ZnO) nanorod arrays have a wide range of applications. Controlling the position of the seed layers (ZnO films) and the nanorod morphology plays an essential role in the fabrication of the sensors and the fulfilment of specific sensing properties, while the patterning of seed layers and controlling the NR morphology have mostly been studied separately. In this study, a focused ion beam was employed to decompose spin-coated zinc acetate films for the precise positioning of the seed layers. The resulting ZnO films were used to hydrothermally grow vertical ZnO NRs that process a high responsivity of 1.24 × 106 A/W at a bias voltage of 5 V. Moreover, this approach provides the following advantages: (1) the carbon to zinc ratio of the zinc acetate film decreased from 4:1 to 1:18.9 after irradiation, demonstrating the efficient decomposition; (2) a patterned ZnO film can be obtained with a low irradiation dose of 1000 μC/cm2; and (3) the seed layer can be utilized directly for vertical nanorod growth without annealing. The morphology of NRs is characterized, and the nanorods grown on seed layers under different treatment conditions had different X-ray diffraction (XRD) peak patterns. Furthermore, the UV–vis absorption spectra of the nanorods were measured. Finally, we examined the rapid patterning of the ZnO thin films. We propose a simple and efficient approach for the decomposition of zinc acetate into patterned ZnO; this provides an integrated solution for ZnO film positioning and the vertical growth of ZnO NRs, which could also offer an approach and inspiration for ultraviolet (UV) detection and ideas for the localized growth of other ZnO nanomaterials.

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Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Cited by 8 publications

References 50 publications

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

Effect of Annealing Atmosphere on the Diode Behaviour of ZnO/Si Heterojunction

Growth of Vertical ZnO Nanorods from Patterned Films via Decomposition of Zinc Acetate by Focused Ion Beam: Implication for UV Detection

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