1999
DOI: 10.1038/19941
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Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires

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Cited by 726 publications
(413 citation statements)
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“…For creating devices at the nanoscale, different structures have to be joined so as to obtain junctions with predefined properties. Junctions between carbon nanotubes (CNTs) and metals (1)(2)(3) or semiconducting (1,4) nanowires are highly desirable to exploit the excellent electronic and mechanical properties of CNTs. In electronic devices, conductive contacts between the graphitic network of CNTs and metallic electrodes need to be established to link the nanotubes with each other and their periphery.…”
mentioning
confidence: 99%
“…For creating devices at the nanoscale, different structures have to be joined so as to obtain junctions with predefined properties. Junctions between carbon nanotubes (CNTs) and metals (1)(2)(3) or semiconducting (1,4) nanowires are highly desirable to exploit the excellent electronic and mechanical properties of CNTs. In electronic devices, conductive contacts between the graphitic network of CNTs and metallic electrodes need to be established to link the nanotubes with each other and their periphery.…”
mentioning
confidence: 99%
“…The pair was granted a patent for metal oxide nanorods in 1999 (2), and by the time Yang graduated from Harvard, he and Lieber had successfully grown junctions between silicon nanowires and carbon nanotubes (3).…”
Section: Education In Chinamentioning
confidence: 99%
“…Recently, such techniques have been applied to nanotubes in the context of an investigation of the electrical response of strained carbon nanotubes [26]. We note that nanotube-based quantum dots have also been obtained using a nanotube/SiC nanorod interface [27]. However, in contrast to this and other methods based on chemical functionalization, the approach proposed here has the advantage of producing pure all-carbon-based heterojunctions with a controlled geometry.…”
Section: (Received 12 January 1999)mentioning
confidence: 99%