Ad-dimers on Strained Carbon Nanotubes: A New Route for Quantum Dot Formation?

Orlikowski, Daniel; Nardelli, Marco Buongiorno; Bernholc, J.; Roland, Christopher

doi:10.1103/physrevlett.83.4132

Cited by 107 publications

(128 citation statements)

References 35 publications

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“…[75][76][77][78][79][80][81] The protrusions can originate from not only the topography of defects ͑e.g., in case of adatoms͒ but also defect-induced electronic states with energies close to the Fermi energy. [75][76][77][78][79][80][81][82][83] The geometry of the protrusions in the simulated STM images may vary depending on the atomic structure of the defect 76,79 and make in theory possible to distinguish the defects from each other. However, in the experimental STM images the convolution and other effects related to the finite size of the STM tip can smear out the spatial variations, so that the hillocks do not have a welldefined shape, 34 except for very few cases.…”

Section: Signatures Of Irradiation-induced Defects In Stm Images Omentioning

confidence: 99%

Modifying the electronic structure of semiconducting single-walled carbon nanotubes byAr+ion irradiation

et al. 2009

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Local controllable modification of the electronic structure of carbon nanomaterials is important for the development of carbon-based nanoelectronics. By combining density-functional theory simulations with Arion-irradiation experiments and low-temperature scanning tunneling microscopy and spectroscopy ͑STM/STS͒ characterization of the irradiated samples, we study the changes in the electronic structure of single-walled carbon nanotubes due to the impacts of energetic ions. As nearly all irradiation-induced defects look as nondistinctive hillocklike features in the STM images, we compare the experimentally measured STS spectra to the computed local density of states of the most typical defects with an aim to identify the type of defects and assess their abundance and effects on the local electronic structure. We show that individual irradiationinduced defects can give rise to single and multiple peaks in the band gap of the semiconducting nanotubes and that a similar effect can be achieved when several defects are close to each other. We further study the stability of defects and their evolution during STM measurements. Our results not only shed light on the abundance of the irradiation-induced defects in carbon nanotubes and their signatures in STS spectra but also suggest a way the STM can be used for engineering the local electronic structure of defected carbon nanotubes.

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Section: Signatures Of Irradiation-induced Defects In Stm Images Omentioning

confidence: 99%

Modifying the electronic structure of semiconducting single-walled carbon nanotubes byAr+ion irradiation

et al. 2009

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“…The bonding sites of single carbon adatoms, [23][24][25] and stable configurations of fully sp 2 -coordinated interstitial dimers incorporated in the graphene lattice [15][16][17] (see 1 for the atomic structures) have been theoretically predicted. Experimental evidence of single carbon adatoms in the so-called bridge position (with the extra atom sitting on top of a C-C bond of graphene) has been presented.…”

mentioning

confidence: 99%

Implantation and Atomic-Scale Investigation of Self-Interstitials in Graphene

et al. 2014

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Crystallographic defects play a key role in determining the properties of crystalline materials. The new class of two-dimensional materials, foremost graphene, have enabled atomically resolved studies of defects, such as vacancies, 1-4 grain boundaries, 5-7 dislocations, 8,9 and foreign atom substitutions. 10-14 However, atomic resolution imaging of implanted selfinterstitials has so far not been reported in any three-but also not in any two-dimensional material. Here, we deposit extra carbon into single-layer graphene at soft landing energies of ∼1 eV using a standard carbon coater. We identify all the self-interstitial dimer structures theoretically predicted earlier, 15-17 employing 80 kV aberration-corrected high-resolution transmission electron microscopy. We demonstrate accumulation of the interstitials into larger aggregates and dislocation dipoles, which we predict to have strong local curvature by atomistic modeling, and to be energetically favourable configurations as compared to isolated interstitial dimers. Our results contribute to the basic knowledge on crystallographic defects, and lay out a pathway into engineering the properties of graphene by pushing the crystal into a state of metastable supersaturation.

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“…Since 1995, electronic properties of the SWNT IMJs have caused a growing number of experimental along with theoretical studies [32,33]. It is indicative that a pentagon-heptagon pair with a symmetry axis nonparallel to the tube axis could modify the nanotube helicity by one unit from (n, m) to (n + 1, m − 1) by Chico et al [34,35].…”

Section: Introductionmentioning

confidence: 99%

Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter

Nizam¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Transmission of twenty-four carbon nanotube geometries to form twelve intramolecular junctions between every two carbon nanotubes have been investigated numerically. The twelve carbon nanotubes are zigzag and rest carbon nanotubes are armchair forming three different kinds of intramolecular junctions named as circumferential defective carbon nanotubes, grouped defective carbon nanotubes and distributed defective carbon nanotubes. Electronic states joining carbon nanotubes form Schottky diode that is analyzed using the tight-binding method. These quantum transmissions through Schottky diodes have been compared among the different defective carbon nanotubes and correlated with the pentagon and heptagon that formed in the intramolecular junction. The transmission coefficient of conduction band always simulated less than the transmission coefficient of valence band in each intramolecular junction irrespective of the joining of carbon nanotubes in the Schottky diodes. The maximum asymmetry of distributed defective carbon nanotubes in transmission is observed more clearly than that for other two defective carbon nanotubes forming Schottky diodes. It is interesting to note that the position of the localized states above and below the Fermi energy level may be controlled with the distribution of the defect pairs and the hexagons around the defects in the defected carbon nanotube.

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Ad-dimers on Strained Carbon Nanotubes: A New Route for Quantum Dot Formation?

Cited by 107 publications

References 35 publications

Modifying the electronic structure of semiconducting single-walled carbon nanotubes byAr+ion irradiation

Modifying the electronic structure of semiconducting single-walled carbon nanotubes byAr+ion irradiation

Implantation and Atomic-Scale Investigation of Self-Interstitials in Graphene

Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter

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