Modifying the electronic structure of semiconducting single-walled carbon nanotubes by<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mtext>Ar</mml:mtext></mml:mrow><mml:mo>+</mml:mo></mml:msup></mml:mrow></mml:math>ion irradiation

Tolvanen, Antti; Buchs, Gilles; Ruffieux, Pascal; Gröning, P.; Gröning, Oliver; Krasheninnikov, Arkady V.

doi:10.1103/physrevb.79.125430

Cited by 47 publications

(30 citation statements)

References 102 publications

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“…26 Spatially localized ion irradiation can also be used for local controllable modification of the electronic structure of carbon nanomaterials. With regard to semiconducting carbon nanotubes, individual irradiation-induced defects produced by Ar plasmas were shown to give rise to single and multiple peaks in the band gap of the nanotubes, and a similar effect has been demonstrated when several defects are close to each other 452 ͑Fig. 59͒.…”

Section: Electronic Propertiesmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

935

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Section: Electronic Propertiesmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

935

591

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“…43−52 According to calculation, single vacancy, double vacancy, and carbon adatom defects each provide a single peak in the middle of the bandgap with a band dispersion at the level 50−70 meV ( Figure 6). 52 Other types of defects such as triple vacancies and Stone− Wales are capable of modifying locally the width of a bandgap. 52 Some of the modeling was done to account for experimentally observed features in low-temperature scanning tunneling microscopy and spectroscopy studies conducted on Ar-ion irradiated SWNTs, 52 although even in pristine SWNTs a significant presence of defects and disorder was revealed experimentally by the Coulomb blockade observed in low temperature electrical measurements, 53−55 selective electrochemical deposition imaging, 47 tip-enhanced Raman spectroscopy, 56 and high resolution photocurrent spectroscopy.…”

Section: Mechanism Of Conductivity Of the Network Of Semiconducting mentioning

confidence: 99%

“…52 Other types of defects such as triple vacancies and Stone− Wales are capable of modifying locally the width of a bandgap. 52 Some of the modeling was done to account for experimentally observed features in low-temperature scanning tunneling microscopy and spectroscopy studies conducted on Ar-ion irradiated SWNTs, 52 although even in pristine SWNTs a significant presence of defects and disorder was revealed experimentally by the Coulomb blockade observed in low temperature electrical measurements, 53−55 selective electrochemical deposition imaging, 47 tip-enhanced Raman spectroscopy, 56 and high resolution photocurrent spectroscopy. 25 The origin of the defects observed in pristine SWNTs has not been established; the defects may be formed during the SWNT synthesis or solution-based processing, which often includes air oxidation, acid treatment, solution based tip sonication, and centrifugation during exfoliation and sorting.…”

Section: Mechanism Of Conductivity Of the Network Of Semiconducting mentioning

confidence: 99%

Networks of Semiconducting SWNTs: Contribution of Midgap Electronic States to the Electrical Transport

et al. 2015

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Single-walled carbon nanotube (SWNT) thin films provide a unique platform for the development of electronic and photonic devices because they combine the advantages of the outstanding physical properties of individual SWNTs with the capabilities of large area thin film manufacturing and patterning technologies. Flexible SWNT thin film based field-effect transistors, sensors, detectors, photovoltaic cells, and light emitting diodes have been already demonstrated, and SWNT thin film transparent, conductive coatings for large area displays and smart windows are under development. While chirally pure SWNTs are not yet commercially available, the marketing of semiconducting (SC) and metallic (MT) SWNTs has facilitated progress toward applications by making available materials of consistent electronic structure. Nevertheless the electrical transport properties of networks of separated SWNTs are inferior to those of individual SWNTs. In particular, for semiconducting SWNTs, which are the subject of this Account, the electrical transport drastically differs from the behavior of traditional semiconductors: for example, the bandgap of germanium (E = 0.66 eV) roughly matches that of individual SC-SWNTs of diameter 1.5 nm, but in the range 300-100 K, the intrinsic carrier concentration in Ge decreases by more than 10 orders of magnitude while the conductivity of a typical SC-SWNT network decreases by less than a factor of 4. Clearly this weak modulation of the conductivity hinders the application of SC-SWNT films as field effect transistors and photodetectors, and it is the purpose of this Account to analyze the mechanism of the electrical transport leading to the unusually weak temperature dependence of the electrical conductivity of such networks. Extrinsic factors such as the contribution of residual amounts of MT-SWNTs arising from incomplete separation and doping of SWNTs are evaluated. However, the observed temperature dependence of the conductivity indicates the presence of midgap electronic states in the semiconducting SWNTs, which provide a source of low-energy excitations, which can contribute to hopping conductance along the nanotubes following fluctuation induced tunneling across the internanotube junctions, which together dominate the low temperature transport and limit the resistivity of the films. At high temperatures, the intrinsic carriers thermally activated across the bandgap as in a traditional semiconductor became available for band transport. The midgap states pin the Fermi level to the middle of the bandgap, and their origin is ascribed to defects in the SWNT walls. The presence of such midgap states has been reported in connection with scanning tunneling spectroscopy experiments, Coulomb blockade observations in low temperature electrical measurements, selective electrochemical deposition imaging, tip-enhanced Raman spectroscopy, high resolution photocurrent spectroscopy, and the modeling of the electronic density of states associated with various defects. Midgap states are present in conventional sem...

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“…defects by primary and secondary ion collisions [11][12][13], causing degradation of the SWCNT structural [14][15][16] and electrical properties [11,17,18]. Typically, SWCNT degradation caused by radiation exposure is undesirable [19], however, interest exists in utilizing controlled radiation conditions to intentionally modify or functionalize the SWCNT structures [20,21].…”

Section: Introductionmentioning

confidence: 98%