Controlled fabrication of α-GaOOH with a novel needle-like submicron tubular structure and its enhanced photocatalytic performance

Xu, Xin; Bi, Ke; Huang, Kai; Lin, Sen; Wang, W.J.; Yang, Tao; Liu, Jie; Fan, Dongyu; Yang, Han; Wang, Y.G.; Lei, Ming

doi:10.1016/j.jallcom.2015.03.088

Cited by 20 publications

(20 citation statements)

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“…Gallium oxide (Ga 2 O 3 ) nanostructures have been recognized as an important material for several applications including catalysts, gas sensors, solar cells, and photodetectors due to their wide bandgap energy ( E g = 4.2 to 4.7 eV) and good luminescence properties [ 13 – 16 ]. Typically, the Ga 2 O 3 nanostructures could be obtained by calcination of gallium oxide hydroxide (GaOOH) which has been synthesized via various fabrication routes including thermal evaporation, hydrothermal, sol-gel, and microwave-assisted methods [ 17 – 19 ].…”

Section: Introductionmentioning

confidence: 99%

Hydrothermal Synthesis and Photocatalytic Property of β-Ga2O3 Nanorods

Reddy

2015

Nanoscale Res Lett

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Gallium oxide (Ga2O3) nanorods were facilely prepared by a simple hydrothermal synthesis, and their morphology and photocatalytic property were studied. The gallium oxide hydroxide (GaOOH) nanorods were formed in aqueous growth solution containing gallium nitrate and ammonium hydroxide at 95 °C of growth temperature. Through the calcination treatment at 500 and 1000 °C for 3 h, the GaOOH nanorods were converted into single crystalline α-Ga2O3 and β-Ga2O3 phases. From X-ray diffraction analysis, it could be confirmed that a high crystalline quality of β-Ga2O3 nanorods was achieved by calcinating at 1000 °C. The thermal behavior of the Ga2O3 nanorods was also investigated by differential thermal analysis, and their vibrational bands were identified by Fourier transform infrared spectroscopy. In order to examine the photocatalytic activity of samples, the photodegradation of Rhodamine B solution was observed under UV light irradiation. As a result, the α-Ga2O3 and β-Ga2O3 nanorods exhibited high photodegeneration efficiencies of 62 and 79 %, respectively, for 180 min of UV irradiation time.

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Section: Introductionmentioning

confidence: 99%

Hydrothermal Synthesis and Photocatalytic Property of β-Ga2O3 Nanorods

Reddy

2015

Nanoscale Res Lett

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“…While the reported high-aspect ratio GaOOH was in tube (hollow cylinder) form [41], the high-aspect ratio β -Ga 2 O 3 in this work was in nanorod form. The electron diffraction pattern of the selected area is shown in Figure 3c, and the atomic-scale image in Figure 3d is the Fourier transform of the the diffraction pattern.…”

Section: Resultsmentioning

confidence: 68%

“…It has been reported that the morphology and size of hydrothermal-synthesized α -GaOOH or β -Ga 2 O 3 nanorods can be affected by pH values, hydrothermal synthesis times/temperatures, reaction temperatures, and alkali chemicals [33,34,41,46,47]. We argue that aside from these factors, the aging time used to form the precipitated products in the supersaturated solution could also significantly affect the morphology and size of the α -GaOOH or β -Ga 2 O 3 nanorods.…”

Section: Resultsmentioning

confidence: 99%

High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis

et al. 2018

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High-aspect ratio β-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio β-Ga2O3 nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio β-Ga2O3 nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of β-Ga2O3 and expedite the integration of one-dimensional β-Ga2O3 into future electronics, sensors, and optoelectronics.

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“…At an excitation wavelength of 280 nm, electron-hole pair generation was only attributed to defect-conduction band because the excitation energy of 280 nm light (4.43 eV) was lower than the band gaps of all samples prepared by us. 50 Thus, it was concluded that Badoping caused defects on GaOOH surface. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%