Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer

Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

doi:10.1021/acsami.6b03183

Cited by 12 publications

(10 citation statements)

References 37 publications

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“…Furthermore, this method potentially improves the patterning resolution to be as small as a few hundreds of nanometers, which corresponds to the half-wavelength of UV radiation. Only a few studies have reported techniques that modulate the charge carriers via photoinduced surface modulation; [35,36] moreover, the efficacy of these techniques are hindered by hysteresis characteristics, high operational voltage, and complicated modulation processes.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous Functional Dielectric Patterns for Charge‐Carrier Modulation in Ultraflexible Organic Integrated Circuits

et al. 2021

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has been expanded in the recent years owing to the unique properties of organic materials, such as biodegradability [11,12] and stretchability. [13][14][15] This allows for easier access to useful unobtained information that has not been extracted by conventional silicon technology. Flexible electronic devices often require integrated circuits (ICs) for signal processing; thus, the development of flexible ICs is crucial in the practical applications of flexible electric devices.Organic thin-film transistors (OTFTs) are attractive candidates in the development of flexible ICs because they can be fabricated on flexible, and even stretchable substrates, with low-cost and largearea fabrication processes. [16][17][18] Their individual electric properties have been analyzed and reported over the past few decades, focusing on threshold voltage (V th ), [19][20][21][22][23][24][25][26][27][28] mobility, [29][30][31] and stability, [32,33] which were primarily controlled or improved by modulating the behavior of charge carriers at the interface between the gate dielectrics and semiconductors. Particularly, V th is one of the key characteristics which affects the performance of the ICs considering that in the early stages the silicon-based ICs was produced using only V th controlled n-channel transistors. [34] Therefore, the V th control using charge-carrier modulation is essential in OTFTs as well as silicon transistors.To maximize the performance metrics of the ICs, for example, the reliability, amplification gain, and operation Flexible electronics have gained considerable attention for application in wearable devices. Organic transistors are potential candidates to develop flexible integrated circuits (ICs). A primary technique for maximizing their reliability, gain, and operation speed is the modulation of charge-carrier behavior in the respective transistors fabricated on the same substrate. In this work, heterogeneous functional dielectric patterns (HFDP) of ultrathin polymer gate dielectrics of poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) are introduced. The HFDP that are obtained via the photo-Fries rearrangement by ultraviolet radiation in the homogeneous PNDPE provide a functional area for charge-carrier modulation. This leads to programmable threshold voltage control over a wide range (−1.5 to +0.2 V) in the transistors with a high patterning resolution, at 2 V operational voltage. The transistors also exhibit high operational stability over 140 days and under the bias-stress duration of 1800 s. With the HFDP, the performance metrics of ICs, for example, the noise margin and gain of the zero-V GS load inverters and the oscillation frequency of ring oscillators are improved to 80%, 1200, and 2.5 kHz, respectively, which are the highest among the previously reported zero-V GS -based organic circuits. The HFDP can be applied to much complex and ultraflexible ICs.

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Section: Introductionmentioning

confidence: 99%

Heterogeneous Functional Dielectric Patterns for Charge‐Carrier Modulation in Ultraflexible Organic Integrated Circuits

et al. 2021

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“…A slight reduction in the drain current was observed, which might originate from the UV‐induced electron trapping effect of the CYTOP layer. [ 33–35 ] Meanwhile, such electron trapping effect played a positive role to the α‐6T photoresponsivity under UV irradiation. The strong UV absorption of the α‐6T layer and the electron trapping in the CYTOP layer induced the large threshold voltage shift of 5.5 V toward positive gate bias along with a noticeable increase in the I D in the α‐6T transistor.…”

Section: Resultsmentioning

confidence: 99%

Optically Controlled Ternary Logic Circuits Based on Organic Antiambipolar Transistors

Panigrahi

Hayakawa

Fuchii

et al. 2020

Adv Elect Materials

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A ternary inverter is demonstrated based on an organic antiambipolar transistor (AAT), in which the output logic states can be precisely controlled with appropriate optical signals. First, the photoresponse of AATs consisting of PTCDI‐C8 and α‐6T layers is systematically investigated. Under visible light, the Λ‐shaped transfer curve of the AATs undergoes a noticeable broadening due to the optically induced threshold voltage shift in both the PTCDI‐C8 and α‐6T controlled ranges. Under ultraviolet light, broadening is observed only on the α‐6T side. These contrasting impacts of the two light signals enable to tune the balance of the ternary logic states in the inverters, including the output voltage levels and the ratio of the respective logic states. Such optically controlled ternary logic circuits possess great potential for their application in next‐generation optoelectronic devices.

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“…Researchers are now vouching for organic thin-film transistors (OTFTs) for fabricating imperceptible IoT devices with low costs and high material efficiencies because of their intrinsic flexibility and compatibility with the printing process. ,,− One of the key fabrication techniques for tuning power consumption and operating speed of the devices is to control the turn-on voltage ( V on ), which is the voltage needed to reach a certain conductivity, or the threshold voltage ( V th ), which is the voltage at which a conductive channel is established between the source and drain electrodes, of both the p- and n-type transistors on a single substrate. − The recently demonstrated silicon complementary metal-oxide semiconductor technology allows control of V on or V th via ion implantation in the channel . In the case of OTFTs, V on or V th is controlled by modulating the semiconductor–dielectric interfacial characteristics through self-assembled monolayers, oxygen plasma exposure, and material doping in organic semiconductors. − However, these methods often require complex patterning processes, because of which tuning the power consumption and operating speed on a single substrate becomes a considerable technological challenge.…”

Section: Introductionmentioning

confidence: 99%

“…The maximum resolution of such a pattern is several hundred nanometers, which is approximately half of the incident light wavelength, and this maximum resolution is sufficiently high for fabricating organic integrated circuits. To date, a few studies have reportedly been conducted on interfacial photochemical reactions using photoreactive insulating polymers. , However, this seldom-reported polymer-based method is not suitable for fabricating flexible multimodal sensors because of their hysteresis characteristics and high driving voltages.…”

Section: Introductionmentioning

confidence: 99%

“… 1 , 6 , 16 − 19 One of the key fabrication techniques for tuning power consumption and operating speed of the devices is to control the turn-on voltage ( V on ), which is the voltage needed to reach a certain conductivity, or the threshold voltage ( V th ), which is the voltage at which a conductive channel is established between the source and drain electrodes, of both the p- and n-type transistors on a single substrate. 20 − 23 The recently demonstrated silicon complementary metal-oxide semiconductor technology allows control of V on or V th via ion implantation in the channel. 24 In the case of OTFTs, V on or V th is controlled by modulating the semiconductor–dielectric interfacial characteristics through self-assembled monolayers, oxygen plasma exposure, and material doping in organic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Fine-Tuning the Performance of Ultraflexible Organic Complementary Circuits on a Single Substrate via a Nanoscale Interfacial Photochemical Reaction

Taguchi

Uemura

Petritz

et al. 2022

ACS Appl. Electron. Mater.

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Flexible electronics has paved the way toward the development of next-generation wearable and implantable healthcare devices, including multimodal sensors. Integrating flexible circuits with transducers on a single substrate is desirable for processing vital signals. However, the trade-off between low power consumption and high operating speed is a major bottleneck. Organic thin-film transistors (OTFTs) are suitable for developing flexible circuits owing to their intrinsic flexibility and compatibility with the printing process. We used a photoreactive insulating polymer poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) to modulate the power consumption and operating speed of ultraflexible organic circuits fabricated on a single substrate. The turn-on voltage (V on ) of the pand n-type OTFTs was controlled through a nanoscale interfacial photochemical reaction. The time-of-flight secondary ion mass spectrometry revealed the preferential occurrence of the PNDPE photochemical reaction in the vicinity of the semiconductor− dielectric interface. The power consumption and operating speed of the ultraflexible complementary inverters were tuned by a factor of 6 and 4, respectively. The minimum static power consumption was 30 ± 9 pW at transient and 4 ± 1 pW at standby. Furthermore, within the tuning range of the operating speed and at a supply voltage above 2.5 V, the minimum stage delay time was of the order of hundreds of microseconds. We demonstrated electromyogram measurements to emphasize the advantage of the nanoscale interfacial photochemical reaction. Our study suggests that a nanoscale interfacial photochemical reaction can be employed to develop imperceptible and wearable multimodal sensors with organic signal processing circuits that exhibit low power consumption.

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Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer

Cited by 12 publications

References 37 publications

Heterogeneous Functional Dielectric Patterns for Charge‐Carrier Modulation in Ultraflexible Organic Integrated Circuits

Heterogeneous Functional Dielectric Patterns for Charge‐Carrier Modulation in Ultraflexible Organic Integrated Circuits

Optically Controlled Ternary Logic Circuits Based on Organic Antiambipolar Transistors

Fine-Tuning the Performance of Ultraflexible Organic Complementary Circuits on a Single Substrate via a Nanoscale Interfacial Photochemical Reaction

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