Controllable growth of C<sub>8</sub>-BTBT single crystalline microribbon arrays by a limited solvent vapor-assisted crystallization (LSVC) method

Jiang, Longfeng; Liu, Jie; Lu, Xiuqiang; Fu, Lulu; Shi, Yanjun; Zhang, Jing; Zhang, Xi; Geng, Hua; Hu, Yuanyuan; Dong, Huanli; Jiang, Lang; Yu, Junsheng; Hu, Wenping

doi:10.1039/c8tc00447a

Cited by 36 publications

(30 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The in‐plane anisotropic variation can be used to estimate the distortion in the ab ‐plane and the change in intermolecular arrangement; Zn(C 6 F 5 ) 2 is found to increase the lattice parameter along [010] b ‐axis and, in order to keep constant (11L) spacing, decrease the lattice parameter along [100] a ‐axis, compressing the a ‐axis in‐plane lattice by ≈1%. Because the C 8 ‐BTBT herringbone motif—similar to rubrene—prefers charge transport between π‐stacking along the a ‐axis, we conclude that such compression may shorten the π–π spacing and benefit charge transport (Figure S8, Supporting Information) . Similar minor changes introducing in‐plane structure polymorphs have been previously reported .…”

supporting

confidence: 81%

Addition of the Lewis Acid Zn(C₆F₅)₂ Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm² V⁻¹ s⁻¹

Paterson

Tsetseris

et al. 2019

Advanced Materials

View full text Add to dashboard Cite

The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201900871.Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C 6 F 5 ) 3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C 6 F 5 ) 3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C 6 F 5 ) 2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C 6 F 5 ) 2 acts simultaneously as a p-dopant and a microstructure modifier.It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm 2 V −1 s −1 . The work not only highlights Zn(C 6 F 5 ) 2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.

show abstract

supporting

confidence: 81%

Addition of the Lewis Acid Zn(C₆F₅)₂ Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm² V⁻¹ s⁻¹

Paterson

Tsetseris

et al. 2019

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…In particular, a mobility of 9.2 cm 2 V −1 s −1 has been extracted from blade-cast devices, prepared by a similar technology as utilized in our work. [4,25,29,30] Nonetheless, the current state-of-the-art solution deposition methods that report device performances for C8-BTBT often use silver (Ag) contacts [5,14,21,26,27] and do show gatevoltage-dependent mobilities. Without this correction, the actual effective mobility is between 6 and 7.4 cm 2 V −1 s −1 .…”

Section: Introductionmentioning

confidence: 99%

High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

Haase

Rocha

Hauenstein

et al. 2018

Adv Elect Materials

102

103

View full text Add to dashboard Cite

record values exceeding 10 cm 2 V −1 s −1 have been reported. [3][4][5][6][7][8] Though these results are promising, some of these reported values suffer from overestimation, [9,10] require significant engineering efforts, [3] complex fabrication procedures, [4] or employ nonscalable fabrication techniques, [5] ultimately highlighting the need for alternative and potentially more industry-relevant processing methods. We believe that adjustments to existing solution coating methods rather than intensive technology engineering could result in a feasible and simple approach.Ink properties such as the solvents' boiling point, [11] solubility parameters, [12] or the solute concentration [13] can be tuned in order to control crystal growth and packing in a manner that provides favorable electrical characteristics. Such ink engineering has recently been shown to generate high mobility devices based on C8-BTBT. [14] In particular, a distinct increase of performance by utilizing a solvent mixture rather than a single solvent has been reported for a range of semiconductors, including TIPS-pentacene [15,16] or diketopyrrolopyrrole (DPP)-based polymers. [17] This approach has frequently been combined with another effective method -the addition of a polymer additive to the printing solution. This combination has been shown to significantly reduce the device-to-device variations and yielded improved transistor performances when applied to high-mobility small molecules, like TIPS-pentacene, [18] diF-TES-ADT, [8,19,20] or even C8-BTBT. [5,7,21,22] In this study, we explore various blends of the high-mobility semiconductor C8-BTBT with the inert polymer polystyrene (PS) with the objective of improving device-to-device uniformity and investigating the effect on device characteristics. We report improved film formation that results in the reduction of deviceto-device variations and the reliable fabrication of high-mobility organic field-effect transistors by a scalable, meniscus-guided coating method, and demonstrate OFETs based on C8-BTBT, that to the best of our knowledge show the highest intrinsic mobility so far reported. Results and Discussion Discussion of C8-BTBT-Based Devices in LiteratureIn the literature, the blending of C8-BTBT and PS led to improvements in the effective mobility of organic field-effect Organic field-effect transistors based on aligned small molecule semiconductors have shown high charge carrier mobilities in excess of 10 cm 2 V −1 s −1 . This makes them a viable alternative to amorphous inorganic semiconductors especially if a high reproducibility can be achieved. Here, the optimization of high mobility organic field-effect transistors based on the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b] benzothiophene (C8-BTBT) via the addition of a polymer additive to the printing solution is reported. Specifically, films and devices are compared based on solutions of the neat semiconductor and the blend with polystyrene and shear-coated devices with excellent device characteristics and gate-voltage-ind...

show abstract

“…Park et al designed and synthesized a series of materials with higher carrier mobilities compared to traditional amorphous Si . Among these high mobility organic materials, 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) has attracted the interest of researchers because of its higher carrier mobility in solution fabricated OFET devices . Anthopoulos introduced a method for blending C8‐BTBT with a polymer, achieving a mobility of 13 cm 2 V −1 s −1 , while Minemawari et al reported that the C8‐BTBT carrier mobility could reach 16.4 cm 2 V −1 s −1 by applying the inkjet printing process .…”

Section: Introductionmentioning

confidence: 99%

Marangoni Effect‐Controlled Growth of Oriented Film for High Performance C8‐BTBT Transistors

Wang

Guo

et al. 2019

Adv Materials Inter

View full text Add to dashboard Cite

of researchers because of its higher carrier mobility in solution fabricated OFET devices. [5,6] Anthopoulos introduced a method for blending C8-BTBT with a polymer, achieving a mobility of 13 cm 2 V −1 s −1 , while Minemawari et al. reported that the C8-BTBT carrier mobility could reach 16.4 cm 2 V −1 s −1 by applying the inkjet printing process. [7,8] Bao and co-workers reported C8-BTBT transistors with an ultrahigh carrier mobility of 43 cm 2 V −1 s −1 , which were produced by off-center spin coating. [6] Wang et al. used the airflow method to fabricate C8-BTBT single crystalline layers and transistors with average and maximum mobilities of 4.8 and 13.0 cm 2 V −1 s −1 , respectively. [9] Nonetheless, the fabrication methods proposed until now still present the drawbacks of being complex and of producing films characterized by an insufficient mobility and low uniformity when to be applied to large-area substrates. Therefore, new methods for OFETs production still need to be developed.In a previous work, our group achieved the production of highly oriented 6,13-bis(triisopropylsilylethynyl) pentacene crystalline thin films by the Marangoni effect-controlled oriented growth (MOG). [10] The MOG method combines the advantages of the "Coffee ring" and Marangoni effects, including highly oriented film deposition, capability of fabricating high surface area films, and low fabrication times. In this work, the MOG method is extended to the fabrication of a C8-BTBT thin film. The substrate is dipped into a mixture solution of C8-BTBT in methylbenzene and carbon tetrachloride and then lifted from the liquid. With the evaporation of the solvent, the "coffee ring" effect makes C8-BTBT particles deposit on the upper edge of the substrate, while the Marangoni effect causes a movement of the C8-BTBT particle away from the upper edge (Figure 1). The balance of these two effects favors the production of a uniform C8-BTBT film on the substrate during the evaporation of the solution. The produced C8-BTBT film is oriented and uniformly covers the substrate.In our experiments, a glass/indium tin oxide (ITO)/AlO x substrate is used. The choice was made because that AlO x can act as the dielectric gate and is capable of adsorbing the alkyl solution, which is favoring the optimal arrangement of the C8-BTBT molecules based on the MOG method. [11][12][13] Grazing-incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM) were applied to find that the produced C8-BTBT film was highly oriented. The OFETs based on this C8-BTBT Highly oriented organic semiconductors have the advantages of relative low trap density and high carrier mobility. These features make organic transistors valuable in many commercial fields, such as electronic sensor arrays and flexible circuits. Here a simple and efficient "Marangoni effect-controlled growth" method is introduced to fabricate highly oriented 2,7-dioctyl[1] benzothieno[3,2-b][1]benzothiophene (C8-BTBT) films on AlO x substrates. The oriented film can cover nearly 60% of the substra...

show abstract

Controllable growth of C₈-BTBT single crystalline microribbon arrays by a limited solvent vapor-assisted crystallization (LSVC) method

Abstract: Uniformly aligned single crystal arrays of C8-BTBT were prepared by the LSVC method and their OFETs exhibit high mobility with uniform distribution.

Cited by 36 publications

References 37 publications

Addition of the Lewis Acid Zn(C₆F₅)₂ Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm² V⁻¹ s⁻¹

Addition of the Lewis Acid Zn(C₆F₅)₂ Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm² V⁻¹ s⁻¹

High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

Marangoni Effect‐Controlled Growth of Oriented Film for High Performance C8‐BTBT Transistors

Contact Info

Product

Resources

About

Controllable growth of C8-BTBT single crystalline microribbon arrays by a limited solvent vapor-assisted crystallization (LSVC) method

Abstract: Uniformly aligned single crystal arrays of C8-BTBT were prepared by the LSVC method and their OFETs exhibit high mobility with uniform distribution.

Cited by 36 publications

References 37 publications

Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V−1 s−1

Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V−1 s−1

High‐Mobility, Solution‐Processed Organic Field‐Effect Transistors from C8‐BTBT:Polystyrene Blends

Marangoni Effect‐Controlled Growth of Oriented Film for High Performance C8‐BTBT Transistors

Contact Info

Product

Resources

About

Controllable growth of C₈-BTBT single crystalline microribbon arrays by a limited solvent vapor-assisted crystallization (LSVC) method

Addition of the Lewis Acid Zn(C₆F₅)₂ Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm² V⁻¹ s⁻¹

Addition of the Lewis Acid Zn(C₆F₅)₂ Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm² V⁻¹ s⁻¹