Controllable growth and flexible optoelectronic devices of regularly-assembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks

Hu, Yi; Mao, Lingyun; Yuan, Xin; Lu, Ja-Yu; Chen, Renpeng; Chen, Tao; Zhang, Wenjun; Xue, Xiaolan; Yan, Wen; Shokouhimehr, Mohammadreza; Zhang, Xiao Li

doi:10.1007/s12274-020-2841-6

Cited by 17 publications

(13 citation statements)

References 38 publications

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“…Besides the trap states between the substrate and Bi 2 S 3 , the nonunity exponent may also be related to the defects that induce charge trapping; similar sublinear responses have also been observed in other low dimensional materials. [ 23 , 24 , 37 ] The photoelectric properties of the photodetector (Figure S7a – d , Supporting Information) were also measured under 532 nm laser light irradiation, exhibiting an excellent photoswitching ratio of 1.08 × 10 4 and high photoresponsivity of 32 A W −1 . The response speed can be evaluated by analyzing the rising and falling edges of an individual response cycle, which are defined as the time intervals for the response to rise 10% to 90% and decay from 90% to 10% of its peak value.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the advantages of nontoxicity, high crust abundance, as well as the facile synthetic route make 1D Bi 2 S 3 nanowire (NW) an ideal candidate for exploring environment-friendly, low-cost, and high-efficiency image sensors. [23][24][25][26][27] Furthermore, sulfurization can reduce trap density of states of the Bi 2 S 3 and lower 1/f noise. [28] In this work, 1D Bi 2 S 3 NWs with high quality were successfully synthesized via a sulfur-assisted vapor transport growth method.…”

Section: Introductionmentioning

confidence: 99%

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Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

Yang

Zhao

et al. 2021

Advanced Science

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With the increasing demand for detection accuracy and sensitivity, dual-band polarimetric image sensor has attracted considerable attention due to better object recognition by processing signals from diverse wavebands. However, the widespread use of polarimetric sensors is still limited by high noise, narrow photoresponse range, and low linearly dichroic ratio. Recently, the low-dimensional materials with intrinsic in-plane anisotropy structure exhibit the great potential to realize direct polarized photodetection. Here, strong anisotropy of 1D layered bismuth sulfide (Bi 2 S 3 ) is demonstrated experimentally and theoretically. The Bi 2 S 3 photodetector exhibits excellent device performance, which enables high photoresponsivity (32 A W −1 ), I on /I off ratio (1.08 × 10 4 ), robust linearly dichroic ratio (1.9), and Hooge parameter (2.0 × 10 −5 at 1 Hz) which refer to lower noise than most reported low-dimensional materials-based devices. Impressively, such Bi 2 S 3 nanowire exhibits a good broadband photoresponse, ranging from ultraviolet (360 nm) to short-wave infrared (1064 nm). Direct polarimetric imaging is implemented at the wavelengths of 532 and 808 nm. With these remarkable features, the 1D Bi 2 S 3 nanowires show great potential for direct dual-band polarimetric image sensors without using any external optical polarizer.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

Yang

Zhao

et al. 2021

Advanced Science

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“…Very recently, the horizontal growth of Bi 2 S 3 NWs on mica by CVD was reported. [ 30 ] However, there are still many issues that remain unclear, such as the epitaxial relationship between Bi 2 S 3 NWs and mica, the growth mechanism, the polarization‐dependent photoresponse and near‐infrared (NIR) optoelectronics applications.…”

Section: Figurementioning

confidence: 99%

In‐plane Epitaxy of Bi₂S₃ Nanowire Arrays for Ultrasensitive NIR Photodetectors

Fan

Wang

et al. 2020

Physica Rapid Research Ltrs

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Semiconductor nanowires (NWs) are considered the ideal building blocks for future nanodevices. [1] In particular, because of their 1D geometry, NWs have attracted tremendous attention due to their potential applications in waveguides, [2] nanolasers, [3] photodetectors (PDs), [4] and field-effect transistors. [5] Although great progress has been made in the synthesis of semiconductor NWs, most of the reported wires were grown with random orientations, which restrained their application in high-density integrated circuits. [6] Generally, practical utilization at the circuit level requires the large-area horizontal alignment of semiconductor NWs with a controlled orientation on a substrate. Several techniques, such as optical tweezers, [7] micromanipulation, [8] and Langmuir-Blodgett assembly [9] may align NWs in well-organized arrays. However, these postgrowth assembly strategies are still subject to poor controllability, low throughput, and high cost, which prevents their application in scale production. [3a,10] The direct epitaxy of semiconductor NWs on an appropriate substrate has great potential to efficiently produce macroscopic-scale wire arrays with horizontal alignment through combining the growth and assembly of NWs into one step. The guided growth of laterally aligned NWs has been successfully achieved for InP NWs on germanium, [11] GaAs NWs on GaAs (100) substrates, [12] GaN and ZnSe NWs on sapphire, [10a,13] etc. These covalent hetero-or homoepitaxies strictly require the substrates and the corresponding epitaxial NWs to have similar crystalline symmetries, lattice parameters, and thermal expansion coefficients to avoid large interface strain. Moreover, the chemical covalent bonds formed between epitaxial NWs and substrates make wire arrays difficult to be peeled off from the grown substrates. This prevents the wires from further being transferred onto other substrates for various functional device applications. Mica, a typical layer-structured mineral, can act as an ideal deposition substrate interacting with the epitaxial wires by the van der Waals (vdW) force, due to its danglingbond-free and atomically smooth surface. [14] The weak vdW force dominated incommensurate epitaxy of wires horizontally on vdW substrates may tolerate a large lattice mismatch, while the wires may still maintain a definite in-plane direction relative to the substrate to minimize the system energy. [15] In addition, the weak interacting force between the epitaxial wire and mica facilitates the transfer of the grown wire arrays without any corrosive reagents etching the substrate, but with the assistance of water. [16] Although mica has been extensively used as a vdW epitaxial substrate for the growth of vertically aligned semiconductor wires and 2D materials, [16,17] the growth of horizontally aligned semiconductor wires on mica is only limited to the material systems of WO 3 , Pb 1Àx Sn x Se, and all inorganic perovskites. [18]

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“…Particularly, VI-bismuth materials Bi2X3 are functional compounds [3] and very attractive materials for several applications including: photovoltaics [4], thermoelectrics [5], photoelectrochemicals [6] , photocatalytic activity [7] , micro-and optoelctronic devices [8] and infrared detectors [9]. Among Bi2X3 materials, the bismuth sulfide 𝐵𝑖 2 𝑆 3 -bismuthiniteis a metal chalcogenide with a very attractive and intriguing properties : a large optical absorption coefficient (> 10 5 𝑐𝑚 −1 for 𝜆 < 500 𝑛𝑚), high electron mobility (> 500 𝑐𝑚 𝑉 −1 𝑠 −1 ) [10] and so on.…”

Section: Introductionmentioning

confidence: 99%

Spin–orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the ternary bismuth sulfide Bi2S2.75Se0.25: Ab-initio calculations

Abdallah

Ouerghui

2021

Opt Quant Electron

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Although the relevant properties of the bismuthinite 𝐵𝑖 2 𝑆 3 , it was recently approved that the substitution of Se atoms in the 𝐵𝑖 2 𝑆 3 lattice can significantly enhance its electro-optical properties.In the present work, a detailed study on the structural, electronic and optical properties of 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 has been carried out based on first principle calculations. The simultaneous effect of Se-doping and spin-orbit coupling (SOC) on bismuth sulfide 𝐵𝑖 2 𝑆 3 was investigated. Our calculations show that 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 exhibits a narrow direct band gap of 1.062 eV after inclusion of the (SOC). The calculation of the carrier effective masses indicates that 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 may possess a high electron mobility material which is in accordance with experimental studies. The linear absorption optical spectra for both 𝐵𝑖 2 𝑆 3 and 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 show that doping bismuthinite with (Se) increases the optical absorption coefficient in the visible range and takes a value up to 10 10 5 𝑐𝑚 −1 . In addition, the dielectric function, optical conductivity and the energy loss function of 𝐵𝑖 2 𝑆 3 and 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 were also derived. The addition of the (Se) content induces a red shift in agreement with experimental studies. A noticeable effect of the (SOC) on the linear optical parameters was observed. The stability of the excitons was also studied by the estimation of the binding energy value. The dispersion energy parameters of 𝐵𝑖 2 𝑆 3 and 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 were estimated using a single oscillator model. Some nonlinearities have been computed with and without inclusion of (SOC) showing that 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 with large nonlinear optical parameters is promising candidate in photonic switching applications.

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Controllable growth and flexible optoelectronic devices of regularly-assembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks

Cited by 17 publications

References 38 publications

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

In‐plane Epitaxy of Bi₂S₃ Nanowire Arrays for Ultrasensitive NIR Photodetectors

Spin–orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the ternary bismuth sulfide Bi2S2.75Se0.25: Ab-initio calculations

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Controllable growth and flexible optoelectronic devices of regularly-assembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks

Cited by 17 publications

References 38 publications

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi2S3 Nanowire

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi2S3 Nanowire

In‐plane Epitaxy of Bi2S3 Nanowire Arrays for Ultrasensitive NIR Photodetectors

Spin–orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the ternary bismuth sulfide Bi2S2.75Se0.25: Ab-initio calculations

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Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

Low‐Noise Dual‐Band Polarimetric Image Sensor Based on 1D Bi₂S₃ Nanowire

In‐plane Epitaxy of Bi₂S₃ Nanowire Arrays for Ultrasensitive NIR Photodetectors