Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

Park, Jun-Young; Moon, Dong‐Il; Seol, Myeong‐Lok; Jeon, Chang Wan; Jeon, Gwang-Jae; Han, Jin−Woo; Kim, Choong‐Ki; Park, Sang-Jae; Lee, Hee Chul; Choi, Yang‐Kyu

doi:10.1038/srep19314

Cited by 12 publications

(3 citation statements)

References 30 publications

(33 reference statements)

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“…For instance, Cu, Ag, Au, or carbon nanotubes − can carry a current density of 2 × 10 6 Acm –2 or it can be even higher at room temperature. However, semiconducting materials are rarely reported to show such a high current-carrying capacity. − Interestingly, we find that α-Bi 4 Br 4 nanobelts exhibit a high current-carrying capacity while keeping a nonmetallic feature. We attribute the high current-carrying capacity to the huge amount of edge states that the α-Bi 4 Br 4 nanobelts possess.…”

Section: Resultsmentioning

confidence: 69%

Ultralong Single-Crystal α-Bi₄Br₄ Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

et al. 2021

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Mechanical exfoliation is of great potential in the preparation of two-dimensional (2D) materials such as graphene and transition metal dichalcogenides, offering new opportunities for exploring extraordinary electronic, optic, optoelectronic, and spintronic properties of low-dimensional materials. However, the extension of the exfoliation method from 2D van der Waals materials to one-dimensional (1D) materials has rarely been reported. Here, we show that the 1D α-Bi 4 Br 4 nanobelts can be prepared by direct exfoliation of single crystals, as characterized by optical microscopy, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and Raman spectroscopy. Electrical transportation measurements indicate that the nanobelts maintain the intrinsic semiconducting properties of the bulk. Remarkably, the nanobelts can bear a very high current density up to 10 6 Acm −2 at room temperature, much higher than that of most semiconducting nanowires reported so far and comparable with that of Cu or Ag. This behavior is attributed to their 1D topological edge states. Our work demonstrates that mechanical exfoliation is an effective way to prepare high-quality α-Bi 4 Br 4 nanobelts for the investigation of fundamental topological physics and the development of high-performance electronic devices.

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Section: Resultsmentioning

confidence: 69%

Ultralong Single-Crystal α-Bi₄Br₄ Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

et al. 2021

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“…To distinguish the difference, the voltage-resolved I–V relationship measured in a vacuum on a fresh device is shown in Figure S8c. The second and following sweeps exhibit the increment in current before a sudden drop, which is a typical feature of electromigration and opposite the decrease in current featured by the current-induced oxidation operated in air. Since oxygen is lacking in a vacuum, the local Joule heating assists the electromigration instead of oxidation and cuts the Cu nanobelt as shown in Figure S8d.…”

Section: Resultsmentioning

confidence: 94%

In Situ Current-Accelerated Phase Cycling with Metallic and Semiconducting Switching in Copper Nanobelts at Room Temperature

et al. 2021

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Here, a current-accelerated phase cycling by an in situ current-induced oxidation process was demonstrated to reversibly switch the local metallic Cu and semiconducting Cu 2 O phases of patterned polycrystalline copper nanobelts. Once the Cu nanobelts were applied by a direct-current bias of ∼0.5 to 1 V in air with opposite polarities, the resistance between several hundred ohms and more than MΩ can be manipulated. In practice, the thickness of 60 nm with a moderate grain size inhibiting both electromigration and permanent oxidation is the optimized condition for reversible switching when the oxygen supply is sufficient. More than 40% of the copper localized beneath the positively biased electrode was oxidized assisted by the Joule heating, blocking the current flow. On the contrary, the reduction reaction of Cu 2 O was activated by the thermally assisted electromigration of Cu atoms penetrating the interlayer at the reverse bias. Finally, based on a high on/off ratio, the fast switching and the scalable production, reusable feasibility based on copper nanobelts such as the memristor array was demonstrated.

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“…The values for the poly-Si, which is the most resistive are 1, 0.6, and 0.16 MA/cm 2 for the fully-clad, trenched, and undercut configurations, respectively. These values are well below the reverse annealing point (1.5 MA/cm 2 ), transition point (3 MA/cm 2 ) and breakdown point (6 MA/cm 2 ) reported in [44] for a similar poly-Si resistor. Note, however, these limits depend on structural properties of the material (grain size), that are particular to each fabrication process.…”

Section: Heating Element Designmentioning

confidence: 44%

Thermo-Optic Phase Tuners Analysis and Design for Process Modules on a Silicon Nitride Platform

et al. 2021

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In this paper, we present a systematic design for manufacturing analysis for thermo-optic phase tuners, framed within the process modules available on a silicon nitride platform. Departing from an established technology platform, the heat distribution in various micro-structures was analyzed, both in steady and transient states, employing a 2D heat transfer model solved numerically. Multi-parametric simulations were performed on designs combining trenches and substrate undercut, by varying their position and dimensions. The simulation results were compared to a reference conventional fully-clad cross-section. Deep air-filled trenches are shown to reduce the power consumption up to 70%, alongside a thermal crosstalk phase shift reduction of more than one order of magnitude (0.045 π rad/mm), at the expense of a slightly lower bandwidth (11.8 kHz). The design with trenches and substrate undercut lowers the power consumption up to 97%, decreases two orders of magnitude the crosstalk (0.006 π rad/mm), at the cost of less than one order of magnitude in bandwidth (0.9 kHz). In the works, we selected three different heater materials (Cr/Au, Al, poly-silicon) offered by the fab and four different heater widths (2.5 to 7 μm). Their combinations are related to performance, reliability and durability of the devices, strongly linked to temperature, current density, and Omegaic resistance. The different figures of merit defined, and the methodology followed, can be mimicked by future designers to take design decisions at bird’s eye.

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Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

Cited by 12 publications

References 30 publications

Ultralong Single-Crystal α-Bi₄Br₄ Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

Ultralong Single-Crystal α-Bi₄Br₄ Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

In Situ Current-Accelerated Phase Cycling with Metallic and Semiconducting Switching in Copper Nanobelts at Room Temperature

Thermo-Optic Phase Tuners Analysis and Design for Process Modules on a Silicon Nitride Platform

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Controllable electrical and physical breakdown of poly-crystalline silicon nanowires by thermally assisted electromigration

Cited by 12 publications

References 30 publications

Ultralong Single-Crystal α-Bi4Br4 Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

Ultralong Single-Crystal α-Bi4Br4 Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

In Situ Current-Accelerated Phase Cycling with Metallic and Semiconducting Switching in Copper Nanobelts at Room Temperature

Thermo-Optic Phase Tuners Analysis and Design for Process Modules on a Silicon Nitride Platform

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Product

Resources

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Ultralong Single-Crystal α-Bi₄Br₄ Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

Ultralong Single-Crystal α-Bi₄Br₄ Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation