Controllable design of solid-state perovskite solar cells by SCAPS device simulation

Tan, Kai; Lin, Peng; Wang, Gang; Liu, Yan; Xu, Zhengguang; Lin, Yixin

doi:10.1016/j.sse.2016.09.012

Cited by 192 publications

(86 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…After that, with increasing absorber thickness, the value of I 0 increases and causes the value of V oc to decrease. Moreover, the fill factor decreases with the increasing thickness which leads to more internal power consumption [14]. The thickness of the absorber layer has to be selected in such a way, so that the diffusion length of the excess charge carrier is larger than the thickness.…”

Section: Effect Of Thickness Of the Ch 3 Nh 3 Sni 3 Layermentioning

confidence: 99%

Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

Anwar

Mahbub

Satter

et al. 2017

International Journal of Photoenergy

200

View full text Add to dashboard Cite

Simulation has been done using SCAPS-1D to examine the efficiency of CH 3 NH 3 SnI 3 -based solar cells including various HTM layers such as spiro-OMeTAD, Cu 2 O, and CuSCN. ZnO nanorod array has been considered as an ETM layer. Device parameters such as thickness of the CH 3 NH 3 SnI 3 layer, defect density of interfaces, density of states, and metal work function were studied. For optimum parameters of all three structures, efficiency of 20.21%, 20.23%, and 18.34% has been achieved for spiro-OMeTAD, Cu 2 O, and CuSCN, respectively. From the simulations, an alternative lead-free perovskite solar cell is introduced with the CH 3 NH 3 SnI 3 absorber layer, ZnO nanorod ETM layer, and Cu 2 O HTM layer.

show abstract

Section: Effect Of Thickness Of the Ch 3 Nh 3 Sni 3 Layermentioning

confidence: 99%

Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

Anwar

Mahbub

Satter

et al. 2017

International Journal of Photoenergy

200

View full text Add to dashboard Cite

show abstract

“…Cs 2 PtI 6 , in contrast, shows promise due to low intrinsic defect density and high absorption coefficient, but may not pose a commercial solution for photovoltaic applications. [ 53–70 ]…”

Section: Discussionmentioning

confidence: 99%

“…[ 2,16–22,33,36,43,46 ] The physical parameters of TCO, ETL, IDL1, IDL2, and HTL for these simulations are shown in Tables S1–S3, Supporting Information. [ 15–70 ] Herein, IDL1 and IDL2 represent the interface defect layers (IDLs) at ETL/absorber and absorber/HTL interfaces, respectively, to account for high defect density and interface recombination. This approach of modeling perovskite solar cells with n‐i‐p junction configuration has been previously demonstrated by Minemoto et al for MAPbI 3 [ 26,27,51 ] and seems valid for all Pb‐free compositions due to mostly intrinsic nature of these materials.…”

Section: Device Modelmentioning

confidence: 99%

Numerical Analysis of Pb‐Free Perovskite Absorber Materials: Prospects and Challenges

2020

View full text Add to dashboard Cite

Optoelectronic properties of organic-inorganic halide perovskites are exceptional with solar cells showing efficiency comparable with conventional photovoltaic technologies. However, with issues of material stability and toxicity of Pb, it is important to understand if Pb can be replaced while maintaining the high power conversion efficiencies of (FA,MA,Cs)Pb(I,Br) 3. Herein, practical efficiency limits of Pb and Pb-free perovskite absorbers are analyzed using a 1D simulator for n-i-p or p-in device structures. SCAPS-1D baseline models for perovskite absorber materials with and without Pb are developed to numerically reproduce the experimental current density-voltage (JV) and external quantum efficiency (EQE) of champion devices from literature. From these baseline models, the efficiency limits are determined based on optimizing the interface band alignments, reduction in midgap defect density, increased absorption coefficient, and no parasitic losses. SCAPS-1D simulations suggest that 1) theoretically determined efficiency limit of Cs 2 PtI 6 perovskites is comparable with (FA,MA,Cs)Pb(I,Br) 3 perovskites, 2) FA 4 GeSbCl 12 is a promising photoabsorber; and 3) for efficient photoconversion with Sn-, Ge-, Ti-, or Ag-based compounds, a reduction of defect density and increase in absorption coefficient is needed.

show abstract

“…For example, perovskite (CH 3 NH 3 PbI 3 ) solar cells with Cu 2 O as HTM was simulated using SCAPS, while only the effect of thickness of the absorber on the performance of PSCs was investigated [32,33]. A device model that involve the simulation of various HTMs with Cu 2 O inclusive, was done but with no sufficient investigation on various parameters (only thickness of absorber) was carried out [34].…”

Section: Introductionmentioning

confidence: 99%

Simulation and Optimization of Lead-Based Perovskite Solar Cells with Cuprous Oxide as a P-type Inorganic Layer

Danladi

Onimisi

Garba

et al. 2024

J. Nig. Soc. Phys. Sci.

View full text Add to dashboard Cite

The hole transporting material (HTM) is responsible for selectively transporting holes and blocking electrons which also plays a crucial role in the efficiency and stability of perovskite solar cells (PSCs). Spiro-MeOTAD is the most popular material, which is expensive and can be easily affected by moisture content. There is a need to find an alternative HTM with sufficiently high resistance to moisture content. In this paper, the influence of some parameters with cuprous oxide (Cu2O) as HTM was investigated using a solar cell capacitance simulator (SCAPS). These include the influence of doping concentration and thickness of the absorber layer, the effect of thickness of ETM and HTM as well as electron affinities of ETM and HTM on the performance of the PSCs. From the obtained results, it was found that the concentration of dopant in the absorber layer, the thickness of ETM and HTM and the electron affinity of HTM and ETM affect the performance of the solar cell. The cell performance improves greatly with the reduction of ETM electron affinity and its thickness. Upon optimization of parameters, power conversion efficiency for this device was found to be 20.42% with a current density of 22.26 mAcm-2, voltage of 1.12 V, and fill factor of 82.20%. The optimized device demonstrates an enhancement of 58.80%, 2.25%, 20.40% and 30.23% in PCE, Jsc, FF, and Voc over the initial cell. The results show that Cu2O in lead-based PSC as HTM is an efficient system and an alternative to spiro-MeOTAD.

show abstract

Controllable design of solid-state perovskite solar cells by SCAPS device simulation

Cited by 192 publications

References 47 publications

Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

Numerical Analysis of Pb‐Free Perovskite Absorber Materials: Prospects and Challenges

Simulation and Optimization of Lead-Based Perovskite Solar Cells with Cuprous Oxide as a P-type Inorganic Layer

Contact Info

Product

Resources

About