Control of the epitaxial orientation and reduction of the interface leakage current in YMnO<sub>3</sub>/GaN heterostructures

Wu, Hao; Yuan, Jie; Peng, Ting; Pan, Yani; Han, T. C.; Shen, Kai; Liu, C

doi:10.1088/0022-3727/42/18/185302

Cited by 7 publications

(4 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The present work is on thin film form since thin films offer controlled way to synthesize multiferroic materials with the possibility of either modified ferroelectric properties or enhancement in magneto-electric/elastic coupling by manipulating the substrate induced strain, grain boundaries, and vacancies. [13][14][15][16][17] Among various techniques to grow thin films, pulsed laser deposition (PLD) technique has been successfully employed in the study of thin films of hexagonal YMnO 3 . 8,15-18 Though the report on core level study of sputtered films is available in the literature, 19 not much is known regarding the VBS of h-YMnO 3 thin film.…”

mentioning

confidence: 99%

Valence band structure of YMnO3 and the spin orbit coupling

Kumar¹,

Choudhary²,

Phase³

2013

Applied Physics Letters

View full text Add to dashboard Cite

Electronic structure of pulsed laser deposited hexagonal-YMnO3 film on Al2O3 (0001) substrate has been investigated by photoemission spectroscopy using variable energy photon sources. Resonance photoemission results reveal the charge transfer nature of h-YMnO3 and variation in strength of hybridization between oxygen 2p and Mn 3d across the valence band region. The valence states sensitive to lattice distortion (inversion asymmetry) demonstrate the evolution of spin orbit interaction (SO). This SO along with its anisotropic behavior is well identified by the constant initial state plots.

show abstract

mentioning

confidence: 99%

Valence band structure of YMnO3 and the spin orbit coupling

Kumar¹,

Choudhary²,

Phase³

2013

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…27,28,47,48 The remaining range of Mn-rich compositions did not show this secondary phase. 28 Not only off-stoichiometric films of YMnO 3 but also stoichiometric thin films of YMnO 3 showed presence of Y 2 O 3 nanoprecipitates, 49,50 where it was argued that a Mn/Y ratio below unity in the starting amorphous layer could yield the driving force for precipitation of Y 2 O 3 . According to the present microscopic investigation Mn deficient lattices (x < 1), the limit of solid solubility must be close to x = 0.95, with lattice images displaying well-defined atomic arrangement in the main phase (not shown here).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Nanodomains Coupled to Ferroelectric Domains Induced by Lattice Distortion in Self-Doped LuMn_xO_3±δ Hexagonal Ceramics

Baghizadeh¹,

Vieira²,

Gonçalves³

et al. 2016

J. Phys. Chem. C

View full text Add to dashboard Cite

Self-doped h-LuMn x O3±δ multiferroic ceramics with 0.92 ≤ x ≤ 1.12 were studied for the dependence of magnetic properties on x. Interlocking of lattice distortion at the nanoscale with ferroelectric (FE) domains in bulk RMnO3 materials is mostly unknown. Here we report occurrence of nanodomains in transmission electron microscopy (TEM) images with the presence of antiphase boundaries/ferroelectric domain walls separating nano-FE domains. Observed chemical inhomogeneity across the crystalline grains of the ceramics causes distortion in the lattice. Formation of nanostructural domains revealed across particles of Mn deficient or Lu deficient samples includes bands of strained atomic planes, structural antiphase boundaries, and planar defects similar to stacking fault ribbons. Nanotwins exist in the basal plane, the twin boundary representing disorder of the stacking of atomic planes along the [110] direction. Image contrast in high resolution HRTEM images and TEM image simulation confirm the role of planar defects on switching of electrical polarization, which cause topology breaking of sixfold vortices of FE domains in h-RMnO3 oxides. The local orbital arrangements of ions are investigated by EELS spectroscopy of O K-edge supported by theoretical analysis. Irreversibility in magnetization below the Néel temperature of antiferromagnetic ordering of the h-LuMn x O3±δ multiferroic solid solution is found for all ceramics showing dependence on cation vacancy type and nominal content. The main features observed in the irreversibility of magnetization were correlated to defects and inhomogeneity in the nanoscale images of the lattice of ceramics. The interplay of lattice distortion linked to extended defects and magnetic/ferroelectric properties of multiferroic ceramics is further discussed.

show abstract

“…However, the authors only discussed the leakage current and conduction mechanism of the In/YMO/GaN capacitor and this study helped in reducing the undesired leakage later. The control of the epitaxial orientation and reduction of the interface leakage current in YMO/GaN heterostructures were examined as this can benefit the potential device applications [105].…”

Section: 12mentioning

confidence: 99%

Multiferroic thin-film integration onto semiconductor devices

Thomas¹,

Scott²,

Bose³

et al. 2010

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

This review deals with thin films of single-phase materials which exhibit two primary ferroic properties, namely ferroelectricity and (anti)ferromagnetism, deposited directly or through buffer layers onto semiconductors. It is the electrical control of ferromagnetism and magnetic control of ferroelectricity at room temperature and resulting device functionality that served as the driving force for the recent widespread research activities in this field. Although Gilbert demonstrated in 1600 that electrostatics (amber) do not couple to magnetostatics (compass needles), charges in motion certainly couple to magnetism, as shown later by Oersted and epitomized by Maxwell's theoretical derivation of the properties of electromagnetic waves. We survey the important contributions of various eminent physicists, from Curie to Dzyaloshinskii and Astrov to Schmid, without whom this field of research might not have developed. Most of the known multiferroic materials are classified into different groups, primarily based on Khomskii's classification of oxide multiferroics. We follow this with a brief discussion on the device application of multiferroics with semiconductor integration.

show abstract

Control of the epitaxial orientation and reduction of the interface leakage current in YMnO₃/GaN heterostructures

Cited by 7 publications

References 30 publications

Valence band structure of YMnO3 and the spin orbit coupling

Valence band structure of YMnO3 and the spin orbit coupling

Nanodomains Coupled to Ferroelectric Domains Induced by Lattice Distortion in Self-Doped LuMn_xO_3±δ Hexagonal Ceramics

Multiferroic thin-film integration onto semiconductor devices

Contact Info

Product

Resources

About

Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructures

Cited by 7 publications

References 30 publications

Valence band structure of YMnO3 and the spin orbit coupling

Valence band structure of YMnO3 and the spin orbit coupling

Nanodomains Coupled to Ferroelectric Domains Induced by Lattice Distortion in Self-Doped LuMnxO3±δ Hexagonal Ceramics

Multiferroic thin-film integration onto semiconductor devices

Contact Info

Product

Resources

About

Control of the epitaxial orientation and reduction of the interface leakage current in YMnO₃/GaN heterostructures

Nanodomains Coupled to Ferroelectric Domains Induced by Lattice Distortion in Self-Doped LuMn_xO_3±δ Hexagonal Ceramics