Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates

Jin, Geng Bang; Liu, J.L; Luo, Yong; Wang, K.L

doi:10.1016/s0040-6090(00)00833-6

Cited by 9 publications

(3 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Floro et al recently showed that the strain-driven roughening behavior in low mismatch ͑low x for Si 1−x Ge x ͒ cases is qualitatively the same as that at much higher strains, including the 4.2% mismatch of Ge on Si ͑001͒. [16][17][18][19][20][21][22][23] Several surfactants, including Sn, Sb, Bi, and B, control island formation by affecting their size and number density. 14 It has been shown, both by experimental observations and simulation, that some of the hut clusters continue to grow, change shape, and become domes, whereas others reduce in size and disappear.…”

Section: Introductionmentioning

confidence: 96%

Systematic studies of SiGe∕Si islands nucleated via separate in situ or ex situ Ga+ focused ion beam-guided growth techniques

Vandervelde

Atha

Hull

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Articles you may be interested inSurface templates fabricated using a focused ion beam for lateral positioning of nanoscale islands on Si (001) substrates J.In this study, we use 25 keV in situ and 30 keV ex situ Ga + focused ion beams ͑FIBs͒ to locally modify the substrate before deposition and determine their effects on nucleation of molecular beam epitaxy grown Ge/ Si islands. FIB processing may alter island formation in at least five ways: the surfactant effect of Ga + , doping effects of subsurface Ga + , local strains, crystalline damage, and surface roughening. To explore these possibilities, we milled square regions of increasing Ga + doses and used atomic force microscopy to monitor islanding in and around these regions. For in situ experiments, doses ranged from ϳ10 13 to 5 ϫ 10 17 ions/ cm 2 ͑0.04-400 ML͒. We began to observe changes in island topology at doses as low as ϳ10 14 ions/ cm 2 . For doses of ϳ10 15 to ϳ8 ϫ 10 16 ions/ cm 2 ͑2-160 ML͒, implanted areas were surrounded by denuded zones that grew from ϳ0.5 to 6 m with increasing dose. Immediately inside the implanted area, island size and concentration appeared to peak. At doses above ϳ6 ϫ 10 16 ions/ cm 2 ͑120 ML͒, Ga + produced noticeable surface depressions, which were often surrounded by enhanced island densities, rather than a denuded zone. For ex situ FIB patterning, samples underwent both pregrowth cleaning and growth of a thin capping layer ͑0-100 nm͒. Doses ranging from 7.5ϫ 10 13 to ϳ10 17 ions/ cm 2 ͑0.15-200 ML͒ were used in concert with varied capping layer thicknesses to study their combined affect on island nucleation. The results correspond well with in situ experiments for thin capping layers. Increased capping layer thickness resulted in muted modifications to island formation for low Ga + doses, while for higher doses trends similar to those obtained in situ are seen.

show abstract

Section: Introductionmentioning

confidence: 96%

Systematic studies of SiGe∕Si islands nucleated via separate in situ or ex situ Ga+ focused ion beam-guided growth techniques

Vandervelde

Atha

Hull

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…As device feature size shrinks well below the micrometer scale and heads to the nanometer regime, many critical restrictions in further scaling down emerge from the extremely small device dimensions, which requires advanced device structures and fabrication techniques. [13][14][15] Therefore, it is critical to control the facet morphology for the device applications using SEG. 4 -6 The self-aligned process of Si SEG may solve the bottleneck problems for device scaling down, such as lithographic limitations and dry etching issues; furthermore, it may reduce the number of required process steps.…”

Section: Introductionmentioning

confidence: 99%

Facet evolution in selective epitaxial growth of Si by cold-wall ultrahigh vacuum chemical vapor deposition

Lim

Song

Lee

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inUltrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si (100) by ultrahigh vacuum chemical vapor deposition Appl. Phys. Lett. 90, 092108 (2007); 10.1063/1.2709993Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition Low temperature in situ boron doped Si epitaxial growth by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition Si epitaxial layers were selectively grown on local-oxidation-of-silicon-patterned Si ͑100͒ substrates by cold-wall ultrahigh vacuum chemical vapor deposition. The Si windows were aligned along the ͓110͔ direction on Si ͑100͒ surface. As growth temperature increased from 550 to 650°C, the development of ͑111͒ facets was dramatically suppressed, and the Si growth on sidewall facet planes was decreased. It is believed that surface diffusion of Si adatoms plays an important role in the morphological evolution of selective epitaxial growth ͑SEG͒. We propose a model to explain our experimental observations, and to clarify the effect of growth temperature on the facet morphology in terms of the surface mass transport and mass accumulation processes on facet surfaces. ͑211͒ facet formation between ͑311͒ and ͑111͒ facets in Si SEG is reported, and the stability of the ͑211͒ plane is also discussed. Finally, we investigated the changes in facet morphology with Si layer thickness, which supports our model for the facet evolution observed in Si SEG.

show abstract

“…To control the placement of individual islands, several groups have developed templates using lithographic patterning [18][19][20] or focused ion beam implantation. 21 In all cases, the smallest island size that has been achieved is D ϳ 40 nm, and the smallest separation observed is L ϳ 80 nm.…”

mentioning

confidence: 99%

Patterning of sub-10-nm Ge islands on Si(100) by directed self-assembly

Guise

Yates

Levy

et al. 2005

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates

Cited by 9 publications

References 37 publications

Systematic studies of SiGe∕Si islands nucleated via separate in situ or ex situ Ga+ focused ion beam-guided growth techniques

Systematic studies of SiGe∕Si islands nucleated via separate in situ or ex situ Ga+ focused ion beam-guided growth techniques

Facet evolution in selective epitaxial growth of Si by cold-wall ultrahigh vacuum chemical vapor deposition

Patterning of sub-10-nm Ge islands on Si(100) by directed self-assembly

Contact Info

Product

Resources

About