Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

Moseley, Michael William; Lowder, J.E.; Billingsley, Daniel; Doolittle, W. Alan

doi:10.1063/1.3509416

Cited by 53 publications

(28 citation statements)

References 29 publications

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“…In addition to p-type doping, MME has also been applied to the growth of high-indium-content InGaN throughout the miscibility gap [43], [44]. The InGaN films grown at solar-relevant compositions exhibit no phase separation or indium segregation, as shown in Fig.…”

Section: Resultsmentioning

confidence: 98%

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Fabien

Moseley

Doolittle

et al. 2014

IEEE J. Photovoltaics

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Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.

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Section: Resultsmentioning

confidence: 98%

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Fabien

Moseley

Doolittle

et al. 2014

IEEE J. Photovoltaics

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“…Michael Moseley's study revealed that indium surface segregation was more associated with the quantity of in− dium adsorbed on the surface, rather than growth in the In−rich regime in general [16]. He proposed a method for controlling indium surface segregation by shuttering Group− −III metal fluxes at a fixed modulation via metal−modulated epitaxy (MME).…”

Section: Improvement Of Crystal Qualitymentioning

confidence: 99%

Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

Zhou

Wang³

2016

Opto-Electronics Review

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“…While initial GaN buffer has been grown under the N-rich condition, Ga-rich condition has been maintained for final GaN to achieve a smoother surface for above quantum well layers [7]. InGaN with ~16 % of In mole fraction has been grown on GaN using metal-modulated epitaxy at 500 °C [8]. Temperature has been raised to 730 °C for the final growth of Al 0.25 Ga 0.75 N barrier with very thin GaN cap to avoid any possible ex-situ oxidation of AlGaN.…”

Section: Experimental Details 21 Epitaxial Growthmentioning

confidence: 99%

Observation of in‐situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and reflectance

Bag

Das

Biswas

2016

Phys. Status Solidi C

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Due to the wave‐particle duality of high energy electron beam, RHEED describes a thin film surface through the interaction of reciprocal lattice rod (RLR) of the film. The RLR spacing of the crystal has been computed using RHEED streak spacing on a fluorescent screen. Present evolution study of RLR spacing has been performed for AlGaN/InGaN heterostructure on thick GaN buffer layer during plasma‐assisted molecular beam epitaxy. Effect of composition, strain and temperature on the crystal has been identified as the function of lattice spacing during the growth. The calibrated reflectivity of LED signal has also been employed to map the thickness of different growing epilayers. RLR spacing decreases for interlayer GaN as compared to AlN. Initially, the RLR spacing of GaN buffer decreases more as compared to interlayer GaN owing to its increased growth temperature after the interlayer AlN. The RLR spacing of GaN again gradually increases with decrement of growth temperature up to the InGaN channel layer. The InGaN RLR spacing decreases again which attributes to the relaxation of InGaN on GaN. Additionally, AlGaN reveals strained state to InGaN in combination with effect of high growth temperature. The phenomena result in additional decrement of lattice distance in reciprocal space. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

Cited by 53 publications

References 29 publications

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

Observation of in‐situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and reflectance

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