Control of Sn Precipitation and Strain-relaxation in Compositionally Step-graded Ge_1-xSn_x Buffer Layers for Tensile-strained Ge Layers

Silicon and Group IV Photonics

“…Ge 12x2y Si x Sn y materials demonstrate high thermal stability far behind GeSn layers which show both phase separation and Sn precipitates for temperatures above 500 C rapid thermal annealing (RTA) [19,20].…”

“…20 Photon and phonon scattering in three subbands in a group IV material with indirect bandgap when laser pumped the subband 3. q32 and q21 stands for phonon momenta and h ω presents the phonon energy.…”