Control of preferential orientation of AlN films prepared by the reactive sputtering method

Ishihara, Masatou; Li, S.J; Yumoto, Hisami; Akashi, Kazuo; Ide, Yukio

doi:10.1016/s0040-6090(98)00406-4

Cited by 164 publications

(82 citation statements)

References 5 publications

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“…3b). The dense, columnar morphology with c-axis (002)-preferred crystallographic orientation, produced at low deposition pressure (0.3 Pa) and ~35% N2 gas concentration, is promoted by an increased in the mobility of adatoms and is in agreement with earlier studies on reactively sputtered AlN films [20,21]. The selected area electron diffraction pattern (SAED) of a relatively large area of an individual AlN@CNT shell/core structure ( Fig.…”

Section: Resultssupporting

confidence: 90%

AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

et al. 2017

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Section: Resultssupporting

confidence: 90%

AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

et al. 2017

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“…Previous reports suggest a transition zone of randomly oriented crystallites for polycrystalline AlN films. 13,18 However such a transition zone could not be determined in this work. In fact, it is clear that AlN nucleates epitaxially on the Pt surface and the growing films exhibit an [0001] orientation.…”

Section: Resultsmentioning

confidence: 83%

“…Particularly, magnetron sputtering from an aluminum target in a reactive atmosphere is a well-established process, where the desired film properties are achieved by variation of the sputtering parameters, bottom electrode (seed layer) material and process temperature. [11][12][13][14][15][16][17][18] The latter is of particular importance in thin film composite sensors since the deposited films and the substrate materials usually possess different thermal expansion coefficients.…”

Section: Introductionmentioning

confidence: 99%

Low temperature aluminum nitride thin films for sensory applications

et al. 2016

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A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d33,f) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (εr) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e31,f|) of 1.39 ± 0.01 C/m2 was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

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“…The deposition rates of AlN films deposited by RF reactive magnetron sputter were decreased from 1. by the accumulation of target nitrification [15][16][17]. So, it is thought to be appropriate that AlN thin films are deposited in N 2 gas concentration of in the region 50% approximately [18].…”

Section: Resultsmentioning

confidence: 99%

Pressure Sensing Properties of AlN Thin Films Sputtered at Room Temperature

Seok¹,

Kim²,

Kang³

et al. 2014

Journal of Sensor Science and Technology

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Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% N 2 /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the N 2 concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the N 2 concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our N 2 concentration range. But in the case of 50% N 2 /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/ TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% N 2 /Ar atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

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Control of preferential orientation of AlN films prepared by the reactive sputtering method

Cited by 164 publications

References 5 publications

AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

Low temperature aluminum nitride thin films for sensory applications

Pressure Sensing Properties of AlN Thin Films Sputtered at Room Temperature

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