We present a resonant micromechanical magnetic field sensor, which utilizes the magnetically induced change in elastic modulus, i.e., the delta-E effect. The sensor is based on magnetoelectric thin film composites, resulting in high sensitivity at room temperature and at low frequencies. The cantilever is electrically excited and read out by a 2 μm AlN piezoelectric layer. Depending on its magnetization, the 2 μm thin film of amorphous (Fe90Co10)78Si12B10 changes its elasticity, which results in a shift of the cantilever's resonance frequency. The sensor is operated in the first or second transversal bending mode at 7.6 kHz or 47.4 kHz. With a limit of detection of 140 pTHz−0.5 at 20 Hz under a magnetic bias field and 1 nTHz−0.5 without external bias field, this sensor exceeds all comparable designs by one order of magnitude.
Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz1/2 in the mechanical resonance. These sensors are comprised of a Si/SiO2/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz1/2 at the mechanical resonance of the sensor. Giant ME coefficients (αME) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.
A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d33,f) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (εr) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e31,f|) of 1.39 ± 0.01 C/m2 was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.
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