Control of optical nanometer gap shapes made via standard lithography using atomic layer deposition

Rhie, Jiyeah; Lee, Dukhyung; Bahk, Young‐Mi; Jeong, Jeeyoon; Choi, Geunchang; Lee, Youjin; Kim, Sunghwan; Hong, Seunghun; Kim, Dai‐Sik

doi:10.1117/1.jmm.17.2.023504

Cited by 8 publications

(4 citation statements)

References 45 publications

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“…Atomic layer lithography which combines photolithography and atomic layer deposition was developed a few years ago for high-throughput wafer-scale fabrication of precisely width-defined nanogap structures [ 1 , 14 , 15 , 16 ]. Using this technique, we can define a nanogap slit width as the thickness of a dielectric spacer grown by atomic layer deposition with an atomic precision uniformly over the whole slit length.…”

Section: Introductionmentioning

confidence: 99%

Angstrom-Scale Active Width Control of Nano Slits for Variable Plasmonic Cavity

Lee

Yun

et al. 2021

Nanomaterials

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Nanogap slits can operate as a plasmonic Fabry–Perot cavity in the visible and infrared ranges due to the gap plasmon with an increased wavenumber. Although the properties of gap plasmon are highly dependent on the gap width, active width tuning of the plasmonic cavity over the wafer length scale was barely realized. Recently, the fabrication of nanogap slits on a flexible substrate was demonstrated to show that the width can be adjusted by bending the flexible substrate. In this work, by conducting finite element method (FEM) simulation, we investigated the structural deformation of nanogap slit arrays on an outer bent polydimethylsiloxane (PDMS) substrate and the change of the optical properties. We found that the tensile deformation is concentrated in the vicinity of the gap bottom to widen the gap width proportionally to the substrate curvature. The width widening leads to resonance blueshift and field enhancement decrease. Displacement ratio ((width change)/(supporting stage translation)), which was identified to be proportional to the substrate thickness and slit period, is on the order of 10−5 enabling angstrom-scale width control. This low displacement ratio comparable to a mechanically controllable break junction highlights the great potential of nanogap slit structures on a flexible substrate, particularly in quantum plasmonics.

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Section: Introductionmentioning

confidence: 99%

Angstrom-Scale Active Width Control of Nano Slits for Variable Plasmonic Cavity

Lee

Yun

et al. 2021

Nanomaterials

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“…A layer of t-SiO 2 can be integrated onto the back side of the PI substrate to prevent biofluid penetration from this direction. [6] Although many published reports describe the deposition of high-κ dielectrics (e.g., Al 2 O 3 , HfO 2 ) by ALD on noble metal surfaces (e.g., Au, Pt) for applications in energy storage, nano/microelectronics and other areas, [31][32][33][34][35][36][37][38][39][40] the underlying mechanisms are of interest due to the lack of naturally occurring hydroxyl groups on the surfaces of such metals. Formation of the initial growth interface during the ALD process can significantly affect the quality of the resulting films, of particular importance in demanding applications such those in biofluid barrier coatings.…”

Section: Resultsmentioning

confidence: 99%

Ultrathin, High Capacitance Capping Layers for Silicon Electronics with Conductive Interconnects in Flexible, Long‐Lived Bioimplants

Chiang

et al. 2019

Adv Materials Technologies

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Bioimplants that incorporate active electronic components at the tissue interface rely critically on materials that are biocompatible, impermeable to biofluids, and capable of intimate electrical coupling for high‐quality, chronically stable operation in vivo. This study reports a materials strategy that combines silicon nanomembranes, thermally grown layers of SiO2 and ultrathin capping structures in materials with high dielectric constants as the basis for flexible and implantable electronics with high performance capabilities in electrophysiological mapping. Accelerated soak tests at elevated temperatures and results of theoretical modeling indicate that appropriately designed capping layers can effectively limit biofluid penetration and dramatically extend the lifetimes of the underlying electronic materials when immersed in simulated biofluids. Demonstration of these approaches with actively multiplexed, amplified systems that incorporate more than 100 transistors in thin, flexible platforms highlights the key capabilities and the favorable scaling properties. These results offer an effective encapsulation approach for long‐lived bioelectronic systems with broad potential for applications in biomedical research and clinical practice.

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“…The subsequent lift-off process with acetone (Duksan Chemical, Incheon, Korea) led to a 250-nm-thick gold film with an array of 10 × 40-μm-sized rectangular holes separated by 10 μm from each other. The sidewall angle of the metallic layers should ideally be 90 degrees; in our sample, it was measured to be about 80 degrees, which was expected to cause a slight decrease in the transmitted amplitudes of the fabricated nano-trench structures [ 27 ]. Then, we conformally covered both the top and the sidewalls of the gold micropatterns with alumina using atomic layer deposition (ALD), with which we could control the thickness down to 1.5 nm.…”

Section: Methodsmentioning

confidence: 99%

Ultra-Narrow Metallic Nano-Trenches Realized by Wet Etching and Critical Point Drying

et al. 2021

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A metallic nano-trench is a unique optical structure capable of ultrasensitive detection of molecules, active modulation as well as potential electrochemical applications. Recently, wet-etching the dielectrics of metal–insulator–metal structures has emerged as a reliable method of creating optically active metallic nano-trenches with a gap width of 10 nm or less, opening a new venue for studying the dynamics of nanoconfined molecules. Yet, the high surface tension of water in the process of drying leaves the nano-trenches vulnerable to collapsing, limiting the achievable width to no less than 5 nm. In this work, we overcome the technical limit and realize metallic nano-trenches with widths as small as 1.5 nm. The critical point drying technique significantly alleviates the stress applied to the gap in the drying process, keeping the ultra-narrow gap from collapsing. Terahertz spectroscopy of the trenches clearly reveals the signature of successful wet etching of the dielectrics without apparent damage to the gap. We expect that our work will enable various optical and electrochemical studies at a few-molecules-thick level.

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Control of optical nanometer gap shapes made via standard lithography using atomic layer deposition

Cited by 8 publications

References 45 publications

Angstrom-Scale Active Width Control of Nano Slits for Variable Plasmonic Cavity

Angstrom-Scale Active Width Control of Nano Slits for Variable Plasmonic Cavity

Ultrathin, High Capacitance Capping Layers for Silicon Electronics with Conductive Interconnects in Flexible, Long‐Lived Bioimplants

Ultra-Narrow Metallic Nano-Trenches Realized by Wet Etching and Critical Point Drying

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