Terahertz (THz) nanogap structures have emerged as versatile platforms for THz science and applications by virtue of their strong in-gap field enhancements and accompanying high levels of sensitivity to gap environments. However, despite their potential, reliable fabrication methods by which to create THz structures with sub-10 nm gaps remain limited. In this work, we fabricated THz split-ring resonator (SRR) arrays featuring a sub-10 nm split gap. Our fabrication method, involving photolithography, argon ion milling, and atomic layer deposition, is a high-throughput technique that is also applicable to the fabrication of other THz structures with sub-10 nm gaps. Through THz-time domain spectroscopy and a numerical simulation, we identified the fundamental magnetic resonances of the nanogap SRRs, at which the electric field enhancement factor is experimentally estimated to be around 7000. This substantial field enhancement makes SRRs with a sub-10 nm gap suitable for the study of high-field phenomena and related applications.

One of the most straightforward methods to actively control optical functionalities of metamaterials is to apply mechanical strain deforming the geometries. These deformations, however, leave symmetries and topologies largely intact, limiting the multifunctional horizon. Here, we present topology manipulation of metamaterials fabricated on flexible substrates by mechanically closing/opening embedded nanotrenches of various geometries. When an inner bending is applied on the substrate, the nanotrench closes and the accompanying topological change results in abrupt switching of metamaterial functionalities such as resonance, chirality, and polarization selectivity. Closable nanotrenches can be embedded in metamaterials of broadband spectrum, ranging from visible to microwave. The 99.9% extinction performance is robust, enduring more than a thousand bending cycles. Our work provides a wafer-scale platform for active quantum plasmonics and photonic application of subnanometer phenomena.

Strong demand for plasmonic devices with an enormously enhanced electric field and desired resonance frequencies has led to extensive investigations of metallic slot structures. While strong field enhancement can be achieved by reducing the width of the slot, the effect of the gap surface plasmon limits the maximum achievable field enhancement at higher frequencies. Specifically, the effect of the gap surface plasmon becomes stronger as the gap width decreases and strongly suppresses the transmission while causing a red-shift of the resonance. Here, we overcome these issues and realize strong field enhancements at higher frequencies, by managing the metal thickness of the nanoslots. We show that, as the nanoslots become as thin as 10 nm, they show a giant electric field enhancement of up to 7600. Moreover, the resonances are strongly blue-shifted to above 1 THz from 0.33 THz. Our work provides a novel route to achieving high field enhancements at desired frequencies, as well as a means by which to characterize the slot as the gap-sensitive or substrate-sensitive type.

Slot-type nanogaps have been widely utilized in transmission geometry because of their advantages of exclusive light funneling and exact quantification of near-field enhancement at the gap. For further application of the nanogaps in electromagnetic interactions with various target materials, complementary studies on both transmission and reflection properties of the nanogaps are necessary. Here, we observe an anomalous extinction of terahertz waves interacting with rectangular ring-shaped sub-30 nm wide gaps. Substrate works as an index matching layer for the nanogaps, leading to a stronger field enhancement and increased nonlinearity at the gap under substrate-side illumination. This effect is expressed in reflection as a larger dip at the resonance, caused by destructive interference of the diffracted field from the gap with the reflected beam from the metal. The resulting extinction at the resonance is larger than 60% of the incident power, even without any absorbing material in the whole nanogap structure. The extinction even decreases in the presence of an absorbing medium on top of the nanogaps, suggesting that transmission and reflection from nanogaps might not necessarily represent the absorption of the whole structure.

A novel plasmonic interferometric sensor intended for application to biochemical sensing has been investigated experimentally and theoretically. The sensor was included a slit surrounded by rectangular grooves using a thick gold film. A three-dimensional finite difference time-domain commercial software package was applied to simulate the structure. The Focused ion beam milling has been used as a mean to fabricate series of rectangular plasmonic interferometer with varying slit-groove distance L. Oscillation behavior is shown by transmission spectra in a broadband wavelength range between 400 nm and 800 nm in the distance between slit and grooves. Red-shifted interference spectrum is the result of increasing refractive indices. The proposed structure is functional from visible to near-infrared wavelength range and yields a sensitivity of 4923 nm/RIU and a figure of merit as high as 214 at 729 nm wavelength. In conclusion, this study indicates the possibility of fabricating a low cost, compact, and real-time high-throughput plasmonic interferometer.

We study light scattering off rectangular slot nano antennas on a metal film varying incident polarization and incident angle, to examine which field vector of light is more important: electric vector perpendicular to, versus magnetic vector parallel to the long axis of the rectangle. While vector Babinet’s principle would prefer magnetic field along the long axis for optimizing slot antenna function, convention and intuition most often refer to the electric field perpendicular to it. Here, we demonstrate experimentally that in accordance with vector Babinet’s principle, the incident magnetic vector parallel to the long axis is the dominant component, with the perpendicular incident electric field making a small contribution of the factor of 1/|ε|, the reciprocal of the absolute value of the dielectric constant of the metal, owing to the non-perfectness of metals at optical frequencies.

Atomic layer deposition is an efficient method for coating a few nanometer-thick alumina over a wafer scale. This method combined with the standard photolithography process was presented to fabricate metallic nanometer gaps that optically act in terahertz regimes. However, the cross-sectional view of the gap shape of the metal-insulator-metal nanogap structure varies depending on the conditions from the stepwise procedure. In specific, selecting photoresist materials, adding ion milling and chemical etching processes, and varying metal thicknesses and substrates result in various optical gap widths and shapes. Since the cross-sectional gap shape affects the field enhancement of the funneled electromagnetic waves via the nanogap, the control of tailoring the gap shape is necessary. Thus, we present five different versions of fabricating quadrangle-ring-shaped nanometer gap arrays with varying different kinds of outcomes. We foresee the usage of the suggested category for specific applications. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

Vanadium dioxide (VO2) is one of the most promising materials for active metasurfaces due to the insulator‐metal transition, urging the development of an etching‐free patterning method and realization of multifunctionality in various spectral bands. Here, without etching, photolithography of vanadium metal followed by thermal oxidation achieve all‐VO2 slit array metasurfaces that can be exploited as a multifunctional terahertz (THz) transparent electrode. The metasurfaces retain approximately constant THz transparency over the phase transition while the electrical conductivity of the VO2 lines changes about a thousand times, and near‐infrared (NIR) diffraction is switched selectively. Numerical simulation shows that, during the phase transition, a decrease in THz transmission through the VO2 lines is compensated for by funneling through the slits, which is especially efficient with a deep subwavelength period. On the contrary, at the NIR range, the optical path difference between the slits and the VO2 lines is controlled according to the VO2 phase, enabling switching between constructive and destructive interferences for a specific diffraction order. It is expected that the demonstrated patterning method and multifunctional THz transparency will promote VO2‐based metasurfaces, finding multispectral applications such as THz/NIR hybrid communication.