Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors

Ghani, T.; Hoyt, Judy L.; McCarthy, A.M.; Gibbons, J. F.

doi:10.1007/bf02652973

Cited by 17 publications

(2 citation statements)

References 6 publications

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“…10 Previous workers have shown that oxygen levels of 10 20 cm Ϫ3 also suppress B diffusion. 9 Since the oxygen concentration in these bases is low (ϳ2ϫ10 18 cm Ϫ3 ) and identical in both wafers with and without carbon, we conclude that carbon is the mechanism that reduces boron diffusion. Carbon in Si has previously been shown to reduce TED of B in silicon due to a Si ion implant and anneal.…”

mentioning

confidence: 68%

Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

Lanzerotti

Sturm

Stach

et al. 1997

Applied Physics Letters

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In this work, we demonstrate that the incorporation of carbon in the base of a npn Si/SiGe/Si heterojunction bipolar transistor dramatically reduces the outdiffusion of boron from the base under postgrowth implantation and annealing procedures. Without the addition of C, these processes would lead to transistors with vastly degraded transistor characteristics. This reduction in B diffusion, when compared to devices without C, has been observed by both secondary ion mass spectroscopy and improved electrical characteristics.

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mentioning

confidence: 68%

Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

Lanzerotti

Sturm

Stach

et al. 1997

Applied Physics Letters

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show abstract

“…1,3 On the one hand, transient enhanced boron diffusion (TED) due to annealing of high-dose implant damage is strongly reduced in SiGe layers with high O content. 1,3 On the one hand, transient enhanced boron diffusion (TED) due to annealing of high-dose implant damage is strongly reduced in SiGe layers with high O content.…”

Section: Introductionmentioning

confidence: 99%

Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors

Knoll

Heinemann

Bolze

et al. 1998

J. Electron. Mater.

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2 Diffusion in Si-Ge alloys

Bracht¹,

Stolwijk²

Diffusion in Semiconductors

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Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors

Cited by 17 publications

References 6 publications

Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

Influence of the oxygen content in SiGe on the parameters of Si/SiGe heterojunction bipolar transistors

2 Diffusion in Si-Ge alloys

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