Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire

Nakasu, Taizo; Aiba, Takayuki; Yamashita, Soichiro; Hattori, Sachiko; Sun, Wei; Taguri, Kosuke; Kazami, Fukino; Kobayashi, Masakazu; Asahi, Toshiaki

doi:10.1016/j.jcrysgro.2015.02.052

Cited by 17 publications

(19 citation statements)

References 24 publications

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“…The XRD spectra of the ZnTe layer grown on the R-plane and the S-plane sapphire exhibited a peak originating from the sapphire substrate and a dominating peak originated from the (111) plane of ZnTe. The diffraction spectra of ZnTe layers on those substrates were similar to that obtained from the layer grown on the c-plane sapphire [14,[16][17][18]. Since the θ-2θ profile is not powerful enough to clarify the existence of the various rotating domains of (111) oriented ZnTe, pole figure measurements were employed.…”

Section: Resultsmentioning

confidence: 86%

“…These studies were mainly carried out by using X-ray diffraction (XRD) pole figure imaging analysis, which was revealed to be a powerful method for ZnTe epilayers on sapphire substrates [12][13][14][15][16][17][18]. The interface between ZnTe and sapphire were also evaluated by using the transmission electron microscope and the lattice mismatch accommodation and related strain distribution were analyzed [14,17,18].…”

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confidence: 99%

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ZnTe layers on R ‐ and S ‐plane sapphire substrates

Nakasu

Hattori

Kizu

et al. 2016

Phys. Status Solidi C

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ZnTe epilayers were grown on R ‐plane ($ 10 \bar 1 4 $) and S ‐plane ($ 10 \bar 1 1 $) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X‐ray diffraction pole figure measurements. It was confirmed that (111)‐oriented domains were formed on the R ‐plane as well as on the S ‐plane substrate. Layers grown on R ‐plane exhibited higher film quality. From the low‐temperature photoluminescence, emissions caused by ZnTe exciton were observed. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 86%

mentioning

confidence: 99%

ZnTe layers on R ‐ and S ‐plane sapphire substrates

Nakasu

Hattori

Kizu

et al. 2016

Phys. Status Solidi C

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“…To examine the orientation relationship between the epilayer and substrate, the pole figure corresponding to 10-14 sapphire was measured immediately after measurement of 111 ZnTe without unmounting the sample. [22][23][24][25] Cleaved pieces of substrates were obtained from one 2-inch wafer to exclude the possibility of ambiguity.…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, ZnTe layers have been prepared on sapphire substrates with various plane orientations to investigate their epitaxial relationship. [22][23][24][25][26][27][28] When m-plane sapphire was used, the ZnTe thin film showed (211)-plane orientation, 22 hence a larger EO effect was expected compared with (111)-plane-oriented film.…”

Section: Introductionmentioning

confidence: 99%

Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

Nakasu

Sun

Kobayashi

et al. 2016

Journal of Elec Materi

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ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

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“…Goriki et al studied AlN growth on n ‐plane sapphire by low‐pressure hybrid vapor‐phase epitaxy . Nakasu et al obtained X‐ray pole figures of ZnTe thin films formed on n ‐plane sapphire . However, very few studies have utilized the n ‐plane sapphire substrate.…”

Section: Introductionmentioning

confidence: 99%

Crystal orientations of β‐Ga₂O₃ thin films formed on n‐plane sapphire substrates

Nakagomi

Kaneko

Kokubun

2015

Physica Status Solidi (b)

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We have used X‐ray pole figure analysis to study crystal orientations of β‐Ga2O3 thin films deposited on (113) n‐plane sapphire substrates by gallium evaporation in oxygen plasma. The films were strongly (−201)‐oriented. However, the (−201) plane of β‐Ga2O3 on the (113) n‐plane sapphire was inclined along the (110) a‐plane. Crystals of (−201)‐oriented β‐Ga2O3 exhibit a threefold symmetry in which the β‐Ga2O3 crystal is rotated by increments of 120° from the direction of the c‐axis on the a‐plane of sapphire. The crystal orientation of β‐Ga2O3 was explained by comparing oxygen atom arrangements on the β‐Ga2O3 plane in three different configurations and on the (113) n‐plane sapphire substrates.

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Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire

Cited by 17 publications

References 24 publications

ZnTe layers on R ‐ and S ‐plane sapphire substrates

ZnTe layers on R ‐ and S ‐plane sapphire substrates

Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

Crystal orientations of β‐Ga₂O₃ thin films formed on n‐plane sapphire substrates

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Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire

Cited by 17 publications

References 24 publications

ZnTe layers on R ‐ and S ‐plane sapphire substrates

ZnTe layers on R ‐ and S ‐plane sapphire substrates

Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

Crystal orientations of β‐Ga2O3 thin films formed on n‐plane sapphire substrates

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Crystal orientations of β‐Ga₂O₃ thin films formed on n‐plane sapphire substrates