Control of cluster synthesis in nano-glassy carbon films

Features of formation of microwave GaAs structures on homo and hetero-transitions for the sub-microconnection of the lsic structures

“…With a decrease in the geometrical dimensions of the transistors, the crystal area decreases, the parasitic capacitances decrease, the speed increases and the power consumption of the LSIC decreases. Today, special attention is focused on the architecture of structures for the LSIC submicron range [8,9]. It is through architecture that the technology issue is expressed qualitatively: the growth of structures, the formation of functional layers and circuit design [10,11].…”

“…The authors of [8,11] note the limitations of the existing technology for forming high-speed LSICs on GaAs with the technological capabilities of gallium arsenide as a compound due to the high cost of gallium ingots to arsenicum, low thermal conductivity gallium to arsenicum, which is 3-5 times less than thermal conductivity of silicon. There are also unsolved technological problems of manufacturing Czochralski ingots with a diameter of more than 75 mm with semiconductor purity [8,11]. In particular, the unsolved problem of cleaning GaAs ingots from isoconcentration impurities of oxygen and carbon, which negatively affect the charge state of the semiconductor-insulator interface.…”

Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates

“…Today, special attention is focused on the architecture of structures for the LSI at submicron range [9,10]. It is the architecture that qualitatively expresses the question of technology: the growth of structures, the formation of functional layers and circuitry [11,12].…”

Formation of carbon films as the subgate dielectric of GaAs microcircuits on Si-substrates

“…Today, special attention is focused on the architecture of structures for the LSI of submicron range [7,8]. It is the architecture that qualitatively expresses the issue of technology: the growth of epistructures, the formation of functional layers and circuitry [9,10].…”