Research into constructive and technological features of epitaxial gallium-arsenide structures formation on silicon substrates

Formation of carbon films as the subgate dielectric of GaAs microcircuits on Si-substrates

“…This technology allows using the whole set of special technology equipment of silicon technology [20]. Here, instead of GaAs-substrates, epitaxial layers are used which significantly reduce the cost of gallium [21], which in nature is only ≤10-4 %.…”

Methods of computer tools development for measuring and analysis of electrical properties of semiconductor films

“…With regard to experimental methods, a large amount of data, methods of their statistical and mathematical processing have been accumulated in the field of semiconductor materials science. Recently, much attention has been paid to experimental studies of the properties of A III B V [3] and A IV B VI [4] semiconductor compounds, in particular in the form of thin films and nanostructures. Such studies are time-consuming and require automation of both the measurement process and the subsequent computer data processing.…”