Contributions to development of power SiC devices

Avram, Mărioara; Brezeanu, Gheorghe; Iliescu, C.; Neagoe, O.

doi:10.1109/smicnd.2004.1403000

2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748)

DOI: 10.1109/smicnd.2004.1403000

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Contributions to development of power SiC devices

Mărioara Avram

Gheorghe Brezeanu²,

C. Iliescu³

et al.

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Contributions to development of high power SiC-IGBT

Avram

Brezeanu²,

Avram³

et al.

CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005.

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The IGBT is a device that combines the advantages of simplicity of drive due to the voltagecontrolled device with high impedance gate and low power dissipation due to the conductivity modulation effect. For that reason, the SiC-IGBT is used for applications that require a high breakdown voltage of S kV and more. The IGBT presented in this paper has one epilayer, a buffer layer between substrate and epilayer to improving the dynamic characteristics and a guard ring / epilayer junction to increase the saturation current. The SiC -IGBT is used in applications that require: higher current conduction capability, power losses efficiently dissipated, operation at higher temperatures, up to 6000C, and in very1 harsh environment.

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Contributions to development of high power SiC-IGBT

Avram

Brezeanu²,

Avram³

et al.

CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005.

Self Cite

View full text Add to dashboard Cite

show abstract

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Contributions to development of power SiC devices

Cited by 1 publication

References 11 publications

Contributions to development of high power SiC-IGBT

Contributions to development of high power SiC-IGBT

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