Continuous Wave Terahertz Sensing Using GaN HEMTs

Javadi, Elham; Delgado-Notario, Juan A.; Masoumi, Nasser; Shahabadi, Mahmoud; Pérez, Jesús Enrique Velázquez; Meziani, Yahya Moubarak

doi:10.1002/pssa.201700607

Cited by 11 publications

(9 citation statements)

References 40 publications

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“…materials systems like graphene [27], black phosphorus [28], and more. There are a few papers available in which a working GaN HEMT mechanism is explained through plasma wave theory [25,[29][30][31][32]. Based on our simulation and experimental investigations, we have demonstrated for the first time that an ISBT mechanism, in addition to established plasma wave theory, can describe the THz behavior of a GaN HEMT device.…”

Section: Extracted (A) CV Profile and (B) 2deg Profile With Applied Gate Voltage (Reprinted With Permission Frommentioning

confidence: 86%

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

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Terahertz (THz) technology has attracted tremendous attention recently due to its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety, communication, radar, space science, and so on. Due to non-availability of powerful sources and highly sensitive and efficient detectors, the so-called THz gap remains largely unfilled. Despite seamless efforts from electronics and photonics technology researchers, the desired level of technology development to fill the THz gap still remains a challenge. GaN-based HEMT structures have been investigated as potential THz sources and detectors by a number of researchers. This chapter presents a very new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) GaN high electron mobility transition (HEMT) devices. ISBT phenomena are usually demonstrated in photonic devices like a quantum cascade laser (QCL). Here we explore ISBT in an electronic GaN HEMT device. Conventional photonic devices like a QCL are operated at cryogenic temperature to minimize thermal effect. Tuning the conduction band through external gate bias is an advantage of an HEMT device for room temperature (RT) THz applications. This chapter demonstrates the theoretical and experimental novel ISBT phenomenon in GaN HEMT is for potential ambient applications in the THz range.

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Section: Extracted (A) CV Profile and (B) 2deg Profile With Applied Gate Voltage (Reprinted With Permission Frommentioning

confidence: 86%

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

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“…The minimum noise equivalent power (NEP) at room temperature was able to reach the order of 10 pW/Hz 0.5 beyond 1 THz [ 7 , 8 , 9 , 10 , 11 , 12 ]. In addition, THz detectors based on HEMTs have been prepared in an array on chips and applied in real-time imaging [ 19 , 20 , 21 ]. However, most of the related work mainly focused on the optimization of THz antenna [ 7 , 8 , 10 ] and the structure of GaN HEMT [ 11 , 12 ]; rarely has novel epitaxial material structures of GaN HEMT THz detectors been reported.…”

Section: Introductionmentioning

confidence: 99%

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

et al. 2021

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A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improved. The maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 pW/Hz0.5 are obtained at the radiation frequency of 315 GHz. The results are comparable to and even more promising than the reported single-channel (SC) GaN HEMT detectors. The enhancement of THz response and the reduction of NEP of the DC GaN HEMT detector mainly results from the interaction of 2DEG in the upper and lower channels, which improves the self-mixing effect of the detector. The promising experimental results mean that the proposed DC GaN/AlGaN HEMT THz detector is capable of the practical applications of THz detection.

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“…The detection was based on the nonlinear properties of the two-dimensional (2D) electron plasma in the channel of FETs. While the proposal of Dyakonov and Shur was a theoretical work, in the course of the following years the detection of sub-terahertz radiation based on plasma waves was also experimentally demonstrated using different types of FETs such as silicon MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) [14], strained-Si MODFETs (Modulation-Doped Field-Effect Transistor) [15], GaN FETs [16], and graphene FETs [17].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs

et al. 2020

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Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz illumination. The response of the MODFET has been characterized using a two-tones solid-state continuous wave source at 0.15 and 0.30 THz. The DC drain-to-source voltage of 500-nm gate length transistors transducing the sub-THz radiation (photovoltaic mode) exhibited a non-resonant response in agreement with literature results. Two configurations of the illumination were investigated: (i) front side illumination in which the transistor was shined on its top side, and (ii) back illumination side where the device received the sub-THz radiation on its bottom side, i.e., on the Si substrate. Under excitation at 0.15 THz clear evidence of the coupling of terahertz radiation by the bonding wires was found, this coupling leads to a stronger response under front illumination than under back illumination. When the radiation is shifted to 0.3 THz, as a result of a lesser efficient coupling of the EM radiation through the bonding wires, the response under front illumination was considerably weakened while it was strengthened under back illumination. Electromagnetic simulations explained this behavior as the magnitude of the induced electric field in the channel of the MODFET was considerably stronger under back illumination.

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Continuous Wave Terahertz Sensing Using GaN HEMTs

Cited by 11 publications

References 40 publications

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs

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