Continuous wave single transverse mode vertical-cavity surface-emitting lasers fabricated by helium implantation and zinc diffusion

Yang, Ying; Dziura, T. G.; Bardin, Thomas; Wang, S.C.; Fernandez, R.

doi:10.1049/el:19920169

Cited by 25 publications

(5 citation statements)

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“…Oxide VCSELs with oxidation apertures have become the common industry practice for the current and mode controls [10]. Other mode-suppression techniques include surface relief [75,76], photonic crystals [77,78], impurity-induced disordering (IID) (also referred to as Zn diffusion) [71,[79][80][81][82][83][84][85], oxide relief [81,86], and integrated mode-selective filter (iMSF) structures, which induce losses of the higher-order modes [70,87], as well as lithographic VCSELs with a phase-shifting mesa (PSM) [88,89].…”

Section: Mode Controlmentioning

confidence: 99%

“…As mentioned in Section 3.2, FM and SM VCSELs are usually tormented with higher differential resistances, early thermal roll-overs resulting in lower roll-over currents, reduced optical output powers, and reduced modulation bandwidths due to the increased differential resistances and operating currents. Some processing techniques have been applied to VCSELs with the aim of tackling the differential resistance and thermal resistance issues that plague small-aperture oxide-confined VCSELs through the introduction of IID technology [71,[79][80][81][82][83][84][85]89]. IID VCSELs show the characteristics of a high speed, outstanding efficiency, highly single mode, lower differential resistance, and relatively higher optical power [71,81,82,84,85].…”

Section: Passivation Materialsmentioning

confidence: 99%

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Recent Advances in 850 nm VCSELs for High-Speed Interconnects

et al. 2022

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Vertical-cavity surface-emitting lasers (VCSELs) have made remarkable progress, are being used across a wide range of consumer electronic applications, and have particularly received much attention from the telecom and datacom industries. However, several constraints are thus currently being tackled to improve the device characteristics and modulation formats to meet the various demanding requirements of the future 800 GbE and 1.6 TbE Ethernet standards. This manuscript discusses the device characteristics and the key considerations in the device designs and optimizations. Finally, we elucidate the latest developments and vital features of modern 850 nm VCSELs for high-speed interconnects.

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Section: Mode Controlmentioning

confidence: 99%

Section: Passivation Materialsmentioning

confidence: 99%

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

et al. 2022

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“…However, the oxide confinement method increases the differential resistance of the device, which needs the same current injection carriers under the higher bias, which also induces the impendence mismatch to degrade the data transmission 25 . Therefore, the high-doping zincdiffusion technology was used to improve the resistance of p-type layer for VCSELs, which further decreases the free-carrier absorption to enhance the quantum efficiency of the VCSEL 26,27 29 . When decreasing the oxide-confined aperture, the transverse mode of the 850-nm VCSEL can be transferred from multi mode to single mode, as shown in Fig.…”

Section: Vcselmentioning

confidence: 99%

850/940-nm VCSEL for optical communication and 3D sensing

Cheng¹,

Shen²,

Kao³

et al. 2018

Opto-Electronic Advances

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This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.

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“…Confming the electronic current to a diameter significantly less that of the optical wavelength maintains a single-transverse-mode, thereby optimizing the laser power. 6 The impact of these improvements in VCSEL efficiency, power and mode control could be tremendous. For example, applications requiring higher powers (e.g.…”

Section: Vcsel Performancementioning

confidence: 99%

Micro-optic and microelectronic integrated packaging of vertical-cavity lasers

et al. 1993

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The applications for optoelectronic integrated circuits demand high performance optoelectronic devices or smart pixels. The stringent requirements on these smart pixels require that packaging technology be developed concurrently to the development of the optoelectronic components. We discuss the packaging requirements of smart pixels based on verticalcavity microlasers. We present a novel microlens/macrolens combination which allows high power densities to be focused to a diffraction-limited spot using present VCSEL technology. Finally, we discuss the applications for microlaser-based spatial light source arrays.

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Continuous wave single transverse mode vertical-cavity surface-emitting lasers fabricated by helium implantation and zinc diffusion

Cited by 25 publications

References 0 publications

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

850/940-nm VCSEL for optical communication and 3D sensing

Micro-optic and microelectronic integrated packaging of vertical-cavity lasers

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