Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths

Pantzas, Konstantinos; Combrié, Sylvain; Bailly, Myriam; Mandouze, Raphaël; Talenti, Francesco Rinaldo; Harouri, A.; Gérard, Bruno; Beaudoin, G.; Gratiet, L. Le; Patriarche, G.; Rossi, Alfredo De; Léger, Yoan; Sagnes, Isabelle; Grisard, Arnaud

doi:10.1021/acsphotonics.2c00156

Cited by 11 publications

(5 citation statements)

References 28 publications

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“…The III-nitride semiconductors are not the sole wide band gap semiconductors of interest. In particular, silicon carbide, diamond and gallium phosphide [34] are gaining a lot of traction.…”

Section: Wide Band Gap Semiconductors: Sic Diamondmentioning

confidence: 99%

Perspectives for III-nitride photonic platforms

Boucaud,

Bhat,

Gromovyi

et al. 2024

Nano Futures

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The development of photonic platforms for the visible or ultra-violet spectral range represents a major challenge. In this article, we present an overview of the technological solutions available on the market. We discuss the pros and cons associated with heterogeneous or monolithic integration. We specifically focus on the III-nitride platform for integrated photonics. The III-nitrides offer every building block needed for a universal platform. We discuss the additional opportunities offered by combining III-nitride semiconductors with other materials such as two-dimensional materials.

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“…The III-nitride semiconductors are not the sole wide band gap semiconductors of interest. In particular, silicon carbide, diamond and gallium phosphide [34] are gaining a lot of traction.…”

Section: Wide Band Gap Semiconductors: Sic Diamondmentioning

confidence: 99%

Perspectives for III-nitride photonic platforms

Boucaud,

Bhat,

Gromovyi

et al. 2024

Nano Futures

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“…After removing the top substrate, the orientation-reversal period is etched into the GaP stack, using e-beam lithography and ICP etching. This creates a crystal seed of orientation-patterned GaP (OP-GaP), that can then be grown to the desired thickness [3].…”

Section: Orientation Patterningmentioning

confidence: 99%

Orientation-patterned gallium phosphide for integrated nonlinear photonics

Pantzas,

Combrie,

Leger

et al. 2023

Photoniques

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Gallium phosphide has long held promise for integrated nonlinear photonics, owing to its high non-linear figure of merit, broad transparency and compatibility with silicon. The recent development of orientation patterning in gallium phosphide has now brought this promise within grasp. Current research efforts are focused on demonstrating and evaluating a variety of second and third-order non-linear processes on the platform, reducing optical losses, and investigating integration with Si.

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“…For example, in [ 17 ] GaP‐on‐insulator platform for the development of integrated waveguides operating in telecom C‐band, grating‐coupled ring resonators and nonlinear elements were studied. GaP suspended waveguides were introduced in [ 18 ] demonstrating efficient second‐harmonic generation (SHG) at telecom wavelengths. SHG in GaP nano‐waveguides was also studied in [ 19 ] demonstrating the record high conversion efficiency with a continuous‐wave pump at a wavelength of 1283.5 nm.…”

Section: Introductionmentioning

confidence: 99%

Elastic Gallium Phosphide Nanowire Optical Waveguides—Versatile Subwavelength Platform for Integrated Photonics

Kuznetsov

Moiseev²,

Абрамов

et al. 2023

Small

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Emerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search for nanoscale waveguides that should satisfy criteria of high optical density, small cross‐section, technological feasibility and structural perfection. All these criteria are met with self‐assembled gallium phosphide (GaP) epitaxial nanowires. In this work, the effects of the nanowire geometry on their waveguiding properties are studied both experimentally and numerically. Cut‐off wavelength dependence on the nanowire diameter is analyzed to demonstrate the pathways for fabrication of low‐loss and subwavelength cross‐section waveguides for visible and near‐infrared (IR) ranges. Probing the waveguides with a supercontinuum laser unveils the filtering properties of the nanowires due to their resonant action. The nanowires exhibit perfect elasticity allowing fabrication of curved waveguides. It is demonstrated that for the nanowire diameters exceeding the cut‐off value, the bending does not sufficiently reduce the field confinement promoting applicability of the approach for the development of nanoscale waveguides with a preassigned geometry. Optical X‐coupler made of two GaP nanowires allowing for spectral separation of the signal is fabricated. The results of this work open new ways for the utilization of GaP nanowires as elements of advanced photonic logic circuits and nanoscale interferometers.

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Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths

Cited by 11 publications

References 28 publications

Perspectives for III-nitride photonic platforms

Perspectives for III-nitride photonic platforms

Orientation-patterned gallium phosphide for integrated nonlinear photonics

Elastic Gallium Phosphide Nanowire Optical Waveguides—Versatile Subwavelength Platform for Integrated Photonics

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