Orientation-patterned gallium phosphide for integrated nonlinear photonics

Abstract

Gallium phosphide has long held promise for integrated nonlinear photonics, owing to its high non-linear figure of merit, broad transparency and compatibility with silicon. The recent development of orientation patterning in gallium phosphide has now brought this promise within grasp. Current research efforts are focused on demonstrating and evaluating a variety of second and third-order non-linear processes on the platform, reducing optical losses, and investigating integration with Si.