Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

Kauer, Matthias; Hooper, S. E.; Bousquet, V.; Johnson, Klein; Zellweger, Christoph; Barnes, J.; Windle, J.; Smeeton, T. M.; Heffernan, J.

doi:10.1049/el:20051430

Cited by 27 publications

(20 citation statements)

References 6 publications

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“…to apply high growth temperatures ($1050 1C for GaN) and high nitrogen precursor overpressure. Indeed, ammonia MBE, which uses atomic beams for group III elements coupled with a large excess supply of NH 3 as the nitrogen precursor [3,4], has been successful in improving the optical quality of nitride films and recently produced the first room-temperature continuous wave (CW) operation of a 405 nm LDs [6]. However, the corrosive nature of ammonia compounded by its large flows creates additional hazards and technological challenges, and also leads to undesirable high hydrogen background during the epitaxial process.…”

Section: Introductionmentioning

confidence: 99%

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski

Wasilewski

Grzegory

et al. 2009

Journal of Crystal Growth

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Nitride-based laser diodes by plasma-assisted MBE-From violet to green emission Skierbiszewski, C.; Wasilewski, Z.R.; Grzegory, I.; Porowski, S.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600-700 1C.In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.

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Section: Introductionmentioning

confidence: 99%

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski

Wasilewski

Grzegory

et al. 2009

Journal of Crystal Growth

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“…At threshold, the LDs have an operating voltage of 8.6 V, resulting in a threshold power dissipation of 1.1 W. To measure the lifetime, the laser operating current was increased manually once the device was above threshold, in order to sustain lasing at approximately constant output power. Cw operation could be maintained for several minutes on several LDs, and for a maximum of 3.2 mins at an optical output power >0.15 mW [9]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, room temperature cw operation of InGaN LDs is of great commercial significance. Here, we report on our recent result of room temperature cw operation of InGaN quantum well laser diodes grown by MBE [9]. Fur-thermore, we outline the further technical challenges associated with achieving commercial quality LDs by MBE.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxy for high‐efficiency nitride optoelectronics

Heffernan

Kauer

Windle

et al. 2006

Phys. Status Solidi (c)

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We review the significant progress made in the development of nitride laser diodes by molecular beam epitaxy (MBE). We report on our recent result of room temperature continuous-wave operation of InGaN quantum well laser diodes grown by MBE. Ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave threshold current of 125 mA, corresponding to a threshold current density of 5.7 kA cm -2. The lasers have a threshold voltage of 8.6 V and a lifetime of several minutes. We outline the further technical challenges associated with demonstrating lifetimes of several thousand hours and present an assessment of the potential of MBE as a growth method for commercial quality nitride optoelectronic devices.

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“…The modern 405-nm InGaN/GaN RW laser structure reported by Kauer et al [3] has been selected for this simulation (Fig. 1).…”

Section: The Structurementioning

confidence: 99%

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

Karbownik

Sarzała

2008

Opto-Electronics Review

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Room-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-waveguide (RW) InGaN/GaN quantum-well diode lasers equipped with the n-type GaN substrate and two contacts on both sides of the structure has been investigated with the aid of the comprehensive self-consistent simulation model. As expected, the mounting configuration (p-side up or down) has been found to have a crucial impact on the diode laser performance. For the RT CW threshold operation of the otherwise identical diode laser, the p-side up RW laser exhibits as high as nearly 68°C maximal active-region temperature increase whereas an analogous increase for the p-side down laser was equal to only 24°C. Our simulation reveals that the lowest room-temperature lasing threshold may be expected for relatively narrow and deep ridges. For the structure under consideration, the lowest threshold current density of 5.75 kA/cm2 has been determined for the 2.2-μm ridge width and the 400-nm etching depth. Then, the active-region temperature increase was as low as only 24 K over RT. For wider 5-μm ridge, this increase is twice higher. An impact of etching depth is more essential for narrower ridges. Quite high values (between 120 and 140 K) of the characteristic parameter T0 convince very good thermal properties of the above laser.

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Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

Cited by 27 publications

References 6 publications

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Molecular beam epitaxy for high‐efficiency nitride optoelectronics

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

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