Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin–ichi; Iwasa, Naruhito; Yamada, Takehiro; Matsushita, Toshio; Kiyoku, Hiroyuki; Sugimoto, Yasunobu; Kozaki, Tokuya; Umemoto, Hitoshi; Sano, Masahiko; Chocho, Kazuyuki

doi:10.1063/1.121250

Cited by 499 publications

(294 citation statements)

References 10 publications

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“…These DDs are consistent with the values given for GaN epitaxial films in the literature. 3,4,9 Analysis of the forward bias I-V data indicated that the predominant current mechanism of the Al 0.22 Ga 0.78 N / AlN/ GaN heterostructure with high DDs in the intermediate bias voltage region that was investigated in this study was a dislocation-governed current-transport mechanism rather than the other currenttransport mechanisms.…”

Section: ͑12͒mentioning

confidence: 99%

“…[1][2][3] Because of the large energy band gap, the applications of Al x Ga 1−x N are extensive, such as for visible-blind ultraviolet ͑UV͒ detectors, laser diodes, and short-wave light-emitting diodes. 4 High-quality AlGaN/GaN heterostructures have been shown to contain twodimensional electron gas ͑2DEG͒, which has attracted special interest due to its potential applications in high mobility transistors operating at high power and high temperature levels. 5,6 The device structures are usually grown on highly lattice-mismatched substrates, such as sapphire, 7 SiC, 8 or Si.…”

Section: Introductionmentioning

confidence: 99%

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Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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The current-transport mechanisms in ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures were studied by using temperature dependent forward-bias current-voltage ͑I-V͒ characteristics in the temperature range of 80-410 K. In order to determine the current mechanisms for ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures, we fitted the experimental I-V data to the analytical expressions given for the current-transport mechanisms in a wide range of applied biases and at different temperatures. The contributions of thermionic-emission, generation-recombination, tunneling, leakage currents that are caused by inhomogeneities, and defects at the metal-semiconductor interface current mechanisms were all taken into account. The best fitting results were obtained for the tunneling current mechanism. On the other hand, we did not observe sufficient agreement between the experimental data and the other current mechanisms. The temperature dependencies of the tunneling saturation current ͑I t ͒ and tunneling parameters ͑E 0 ͒ were obtained from fitting results. We observed a weak temperature dependence of the saturation current and the absence of the temperature dependence of the tunneling parameters in this temperature range. The results indicate that in the temperature range of 80-410 K, the mechanism of charge transport in the ͑Ni/ Au͒ −Al 0.22 Ga 0.78 N / AlN/ GaN heterostructure is performed by tunneling among those dislocations intersecting the space charge region. The dislocation density ͑D͒ that was calculated from the I-V characteristics, according to a model of tunneling along the dislocation line, gives the value of 0.24ϫ 10 7 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements.

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Section: ͑12͒mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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“…6,7) Few single-crystal GaN substrates have been fabricated until recently and, consequently, most GaN-based devices had been grown on heterogeneous substrates such as sapphire, SiC, or Si. [8][9][10][11][12] Additionally, the highpurity epitaxial layers of GaN that are needed for drift layers of vertical-type power devices are difficult to grow by conventional metal-organic chemical vapor deposition (MOCVD), because of the inevitable incorporation of carbon from metalorganic sources, 5,[13][14][15] despite the great success of MOCVD in the commercialization of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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“…The rapid development of device quality GaN, InGaN and AlGaN over the past five years has lead to the commercialization of blue and green light emitting diodes, along with demonstrations of violet laser diodes and a variety of electronic devices [1] [2] [3] [4] [5] [6] [7] [8] [9] [10]. In addition, a number of photodetectors based on photoconductive and junction devices have also recently been reported [11] [12] [13].…”

Section: Introductionmentioning

confidence: 99%

Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

Brown

Matthews

et al. 1999

MRS Internet j. nitride semicond. res.

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A visible-blind UV camera based on a 32 x 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region.

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Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Cited by 499 publications

References 10 publications

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

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