Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature

Onishi, Toshikazu; Imafuji, Osamu; Nagamatsu, Kentaro; Kawaguchi, Masao; Yamanaka, Koji; Takigawa, Shigenobu

doi:10.1109/jqe.2012.2203586

Cited by 109 publications

(89 citation statements)

References 13 publications

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“…Publications from a few groups followed, and since the first demonstrations there have been a lot of progress in the field of electrically injected III-nitride based VCSELs, both in terms of new technological solutions as well as performance characteristics. 31 To date there are seven groups in the world who have demonstrated lasing under electrical injection [27][28][29][30][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] , and the different approaches and structures are summarized in Table 1. The performance characteristics of published devices, in terms of output power and threshold current density, are plotted in Fig.…”

Section: State-of-the-artmentioning

confidence: 99%

“…In fact, it has been shown that most apertures used for current confinement result in optically anti-guided structures with associated high losses 132,133 , for more details see Section 4. Switching to index-guided structures instead, will contribute to lowering threshold currents and can be an effective way to reduce filamentation, something often seen in GaN-VCSELs 27,28,30,32,39,40,46 , and also seen in early proton-implanted gain-guided GaAs-VCSELs 135,136 .…”

Section: ωCmmentioning

confidence: 99%

“…If an epitaxial lateral overgrowth of the DBR is applied instead, the thickness of the n-GaN will be determined by the ratio between lateral and vertical growth rates in combination with the geometry of the overgrown DBR 29 . If chemical mechanical polishing is used to remove the substrate, the n-GaN will also be thick due to the inaccuracy in the substrate removal process 28 . In addition, a longer cavity length yields a decreased longitudinal mode separation, making it easier to match one longitudinal mode (or several) to the stopband of the mirrors and the gain spectrum.…”

Section: Cavity Lengthmentioning

confidence: 99%

“…26 To summarize, even though there are no commercial GaN-based VCSELs yet, there are many applications which would benefit from such a light source, and most likely more applications will appear once such light source is available. It is also encouraging to see many companies investing time and effort into this field, and as a result Nichia 27 , Panasonic 28 and Sony 29 now all have demonstrated electrically injected GaN-VCSELs.…”

Section: Introductionmentioning

confidence: 99%

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Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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Section: State-of-the-artmentioning

confidence: 99%

Section: ωCmmentioning

confidence: 99%

Section: Cavity Lengthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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“…III-Nitride based materials are highly attractive for making vertical microcavity (MC) light emitters such as strongly coupled polariton lasers and conventional vertical-cavity surface-emitting lasers (VCSELs) due to their large exciton binding energies and wide spectra tuning range in the ultraviolet-visible region [1][2][3][4][5][6][7][8][9][10][11][12]. So far, electrically pumped polariton emitters and conventional VCSELs have been demonstrated in III-nitride based MCs at room temperature (RT).…”

Section: Introductionmentioning

confidence: 99%

Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Lai

Chang

et al. 2017

Nanoscale Res Lett

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In this work, we report on electrically pumped III-N microcavity (MC) light emitters incorporating oxide confinement apertures. The utilized SiO 2 aperture can provide a planar ITO design with a higher index contrast (~1) over other previously reported approaches. The fabricated MC light emitter with a 15-μm-aperture shows a turn-on voltage of 3.3 V, which is comparable to conventional light emitting diodes (LEDs), showing a good electrical property of the proposed structure. A uniform light output profile within the emission aperture suggesting the good capability of current spreading and current confinement of ITO and SiO 2 aperture, respectively. Although the quality factor (Q) of fabricated MC is not high enough to achieve lasing action (~500), a superlinear emission can still be reached under a high current injection density (2.83 kA/cm 2 ) at 77 K through the exciton-exciton scattering, indicating the high potential of this structure for realizing excitonic vertical-cavity surface-emitting laser (VCSEL) action or even polariton laser after fabrication optimization.

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Green and Blue Vertical‐Cavity Surface‐Emitting Lasers

Mei

et al. 2020

Nitride Semiconductor Technology

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Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature

Cited by 109 publications

References 13 publications

Progress and challenges in electrically pumped GaN-based VCSELs

Progress and challenges in electrically pumped GaN-based VCSELs

Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Green and Blue Vertical‐Cavity Surface‐Emitting Lasers

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