Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature

Chen, H. Z.; Ghaffari, A.; Wang, H.; Morkoç̌, H.; Yariv, A.

doi:10.1364/ol.12.000812

Cited by 47 publications

(12 citation statements)

References 4 publications

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“…Attempts to grow III-V QW lasers directly on Si date back to the 1980 s. In 1987, room-temperature continuous-wave (CW) operation of large-area GaAs/AlGaAs hetero-structure lasers on (100) Si substrates was obtained [86]. The laser operated on four different occasions for a total of 4 min before degradation took place.…”

Section: Lau Progress In Crystal Growth and Characterization Of Matmentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

116

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Please note: Changes made as a result of publishing processes such as copy-editing, formatting and page numbers may not be reflected in this version. For the definitive version of this publication, please refer to the published source. You are advised to consult the publisher's version if you wish to cite this paper.This version is being made available in accordance with publisher policies. See http://orca.cf.ac.uk/policies.html for usage policies. Copyright and moral rights for publications made available in ORCA are retained by the copyright holders. U N C O R R E C T E D P R O O F ARTICLE INFO ABSTRACTMonolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

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Section: Lau Progress In Crystal Growth and Characterization Of Matmentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

116

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“…© 2008 Optical Society of America OCIS codes: 250.3140, 130.2790, 130.3120, 140.5960. During the past two decades, there has been an everincreasing pace of activity in the area of realizing laser emission from silicon ͑Si͒ [1][2][3][4][5][6]. Recently, we proposed a novel supermode Si/ III-V hybrid waveguide system for laser oscillation, amplification, and modulation [7].…”

mentioning

confidence: 99%

Engineering supermode silicon/III-V hybrid waveguides for laser oscillation

Sun

Yariv

2008

J. Opt. Soc. Am. B

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We analyze a silicon/III-V hybrid semiconductor waveguide structure for laser oscillation. We show that, by optimally designing and controlling the resonant supermode behavior in such structures, the modal gain can be enhanced five times compared with that of the existing silicon evanescent laser, while maintaining efficient coupling to outside silicon waveguide circuits. © 2008 Optical Society of America OCIS codes: 250.3140, 130.2790, 130.3120, 140.5960. During the past two decades, there has been an everincreasing pace of activity in the area of realizing laser emission from silicon ͑Si͒ [1][2][3][4][5][6]. Recently, we proposed a novel supermode Si/ III-V hybrid waveguide system for laser oscillation, amplification, and modulation [7]. The structure is illustrated in Fig. 1. The hybrid device consists of two parallel waveguides in close proximity coupled to each other. The top waveguide is fabricated in a III-V compound semiconductor and supplies the gain, and the bottom is a waveguide fabricated in Si. The eigenmodes of this hybrid structure, the supermodes, can be controlled by suitable design of dimensions of the waveguides [7]. The supermode is thus designed such that, in the left region (main body) most of the modal energy is concentrated in the III-V waveguide so that the mode experiences maximal gain, while in the right region near the output facet, the width of the Si waveguide is widened adiabatically so that most of the mode transforms to the Si waveguide for coupling to other Si photonic circuits. The fundamental difference between this scheme and the reported evanescent lasers by Fang et al.[6] is the use of supermode coupling rather than evanescent coupling. This makes it possible to fundamentally break the trade-off between the gain available to an optical mode and the output coupling efficiency intrinsic to the hybrid evanescent lasers. Therefore we expect a laser designed with this principle to operate with higher efficiency and be far shorter.In this paper, we address several issues in engineering the supermode hybrid Si/ III-V waveguide structure for laser oscillation. By optimally designing the III-V wafer layer structure, the III-V waveguide width, the Si waveguide width, and the adiabatic taper, we will show that the modal gain in the supermode resonator can be improved by a factor of 5 compared with that in the reported evanescent lasers. Finally, we will discuss the tolerance of misalignment of the two waveguides during fabrication.First we focus on the optimal layer structure of the III-V active wafer. In the evanescent laser design by Fang et al. [6], the quantum wells (QWs) needed to be as close to the Si waveguide as possible to have more of the mode field evanescently penetrating into the QW region. In our supermode scheme, the resonant supermode can have most of the energy concentrated in the III-V waveguide without reducing the distance between the QWs and the Si waveguide. Thus, we seek to engineer the wafer to make full use of the available gain from the QWs. Since all the...

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“…Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J th , T 0 , and dg/dn in these devices are 1.24 kA/cm 2 , 242 K, and 5.6 Â 10 À17 cm 2 , respectively. The peak emission is observed at $1.2 lm.…”

mentioning

confidence: 84%

“…Indeed, deep level traps have been identified in GaN nanowires. 11 From the ratio of the PL intensity at room and cryogenic temperatures at an excitation level of 150 kW/cm 2 , an approximate value of the internal quantum efficiency (g i ) of 17% is derived. In order to gain a better understanding of this low value, we performed temperature dependent time-resolved PL (TRPL) measurements with 267 nm excitation provided by a mode-locked Ti-sapphire laser.…”

Section: à2mentioning

confidence: 99%

“…III-V quantum well and quantum dot lasers grown directly on silicon have been reported. [2][3][4] The greatest drawback of this technology is the formation of antiphase boundaries during epitaxy. The general solution to this problem-use of misoriented substrates (offcut (001)Si)-is not compatible with Si complementary metal-oxide semiconductor (CMOS) technology.…”

mentioning

confidence: 99%

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III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Hazari

Aiello

et al. 2015

Applied Physics Letters

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III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

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Continuous-wave operation of extremely low-threshold GaAs/AlGaAs broad-area injection lasers on (100) Si substrates at room temperature

Cited by 47 publications

References 4 publications

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Engineering supermode silicon/III-V hybrid waveguides for laser oscillation

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

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