Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

Wang, J.S.; Lin, Gray; Hsiao, R. S.; Yang, Chin-Sheng; Lai, Chih‐Ming; Liang, Chiu-Yueh; Liu, H.Y.; Chen, T.T.; Chen, Y.F.; Chi, J.Y.; Chen, J.F.

doi:10.1007/s00340-005-1975-2

Cited by 6 publications

(1 citation statement)

References 16 publications

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“…1.3 µm emission with high luminescence intensity from a vertical stack of small InAs QDs in GaAs has not yet been obtained. Our previous work [7,8] demonstrated high-performance EVCQD lasers with lasing wavelengths of around 1.23 µm using a ten-stack InAs/GaAs superlattice with a spacer thickness of 17 nm. However, fully understanding structural and electronic coupling between dot layers is essential to device design and growth condition optimization, especially for long-wavelength applications.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures

Wang

Lin

et al. 2006

Nanotechnology

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This work systematically investigated the optical and structural properties of multilayer electronic vertically coupled InAs/GaAs quantum dot (QDs) structures grown by molecular beam epitaxy for long-wavelength applications. A significant energy blue-shift in the photoluminescence (PL) spectra from 30-period InAs/GaAs QDs structures was observed as the GaAs spacer thickness was decreased. Transmission electron microscopy (TEM) and PL measurements indicated that the abnormal blue-shift can be attributed to the strain-driven In/Ga intermixing between QDs and spacer layers, which overcompensates for the effects of electronic and structural couplings between QD layers. Moreover, this study demonstrates that increasing the growth rate of InAs QDs can prevent intermixing. A PL emission wavelength of 1320 nm with strong luminescence at room temperature, which corresponds to an energy red-shift of 50 meV from that of the single QD layer sample, was achieved in a 10-period InAs/GaAs QD superlattice with a spacer thickness of 16 nm.

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Section: Introductionmentioning

confidence: 99%