We have investigated the feasibility of laser-induced breakdown spectroscopy (LIBS) as a fast, reliable classification tool for sea salts. For 11 kinds of sea salts, potassium (K), magnesium (Mg), calcium (Ca), and aluminum (Al), concentrations were measured by inductively coupled plasma-atomic emission spectroscopy (ICP-AES), and the LIBS spectra were recorded in the narrow wavelength region between 760 and 800 nm where K (I), Mg (I), Ca (II), Al (I), and cyanide (CN) band emissions are observed. The ICP-AES measurements revealed that the K, Mg, Ca, and Al concentrations varied significantly with the provenance of each salt. The relative intensities of the K (I), Mg (I), Ca (II), and Al (I) peaks observed in the LIBS spectra are consistent with the results using ICP-AES. The principal component analysis of the LIBS spectra provided the score plot with quite a high degree of clustering. This indicates that classification of sea salts by chemometric analysis of LIBS spectra is very promising. Classification models were developed by partial least squares discriminant analysis (PLS-DA) and evaluated. In addition, the Al (I) peaks enabled us to discriminate between different production methods of the salts.
We used low-temperature reactions to synthesize different-sized CdSe quantum dots (QDs) capped with fatty-acid and phosphine ligands. From the correlation of high-resolution transmission electron microscopy and X-ray diffraction (XRD) analyses of the synthesized QDs, we observed size-dependent shape anisotropy. In addition, the recorded XRD patterns revealed mixed crystal facets with zinc blende and wurtzite structures in small-sized QDs. Furthermore, from differential absorption (DA) spectra, we extracted the electronic transition energies for different-sized QDs, which were found to be similar to the calculated values of the quantum size levels associated with band mixing of CdSe QDs with a moderate bandgap. We found that the excitonic absorption peaks are increasingly “hidden” with decreasing QD size because of the crystal structure and crystalline quality. The results show good agreement with the obtained diffraction patterns and the estimation errors obtained from the DA spectra.
The influence of the growth conditions of multilayer CdTe/ZnTe quantum dots (QDs) on Si substrate upon their carrier dynamics is studied using intensity integration and broadening photoluminescence. The unusual temperature dependence of the line broadening is explained using a model for interband transitions that involves a lowest discrete electronic state (1Se) with different discrete hole states (1S3/2 and 2S3/2) and a 1P transition. These transitions are expected to play a critical role in both the thermally activated energy and the line broadening of the QDs. We also demonstrate that a thermally activated transition between two different states occurs with band low-temperature quenching, with values separated by 5.8–16 meV. The main nonradiative process is thermal escape assisted by carrier scattering via emission of longitudinal phonons through the hole states at high temperature, with an average energy of 19.3–20.2 meV.
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