Continuous-wave electrically pumped 1550  nm lasers epitaxially grown on on-axis (001) silicon

Shi, Bei; Zhao, Huajun; Wang, Lei; Song, Bowen; Brunelli, Simone Tommaso Šuran; Klamkin, Jonathan

doi:10.1364/optica.6.001507

Cited by 43 publications

(24 citation statements)

References 42 publications

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“…Still, these thresholds remain higher than those of similar LDs grown on GaSb [2,3] and those of GaAs QDLs emitting near 1.3 µm grown on on-axis Si [17][18][19]23,24], the best semiconductor lasers on Si to date. They are, however, notably lower than those of InP-based LDs emitting near 1.5 µm grown on on-axis Si [20][21][22].…”

mentioning

confidence: 77%

“…These achievements relied on a two-step strategy where either GaAs on patterned Si [17], GaAs on planar Si [18], or GaP on planar Si [19] templates were first prepared by metal-organic vapor phase epitaxy (MOVPE) before being transferred to another laboratory where the laser heterostructures were grown by molecular-beam epitaxy (MBE). On the other hand, laser diodes in the InP technology for emission near 1.5 µm have also been reported by an all-MOVPE approach, but they relied either on very thick (∼ 13 µm) buffer layers [20] or on patterned Si substrates [21,22], both of which are marginally compatible with industry standards. Finally, it has been recently demonstrated that by further optimizing the III-V-on-Si MBE growth, high-performance InAs/GaAs QDLs grown in a single all-MBE run on planar, on-axis Si could be achieved [23,24].…”

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confidence: 99%

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Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Calvo¹,

Bartolome²,

Bahriz³

et al. 2020

Optica

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The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-axis (001) Si substrates is actively sought for the realization of active photonic integrated circuits. Here we report on the first mid-infrared semiconductor laser epitaxially grown on on-axis Si substrates, i.e., compatible with industry standards. Furthermore, these GaSb-based laser diodes demonstrate low threshold current density, low optical losses, high temperature operation, and high characteristic temperatures. These results represent a breakthrough toward the integration of semiconductor laser sources on Si for smart sensors.

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confidence: 77%

mentioning

confidence: 99%

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Calvo¹,

Bartolome²,

Bahriz³

et al. 2020

Optica

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“…The material growth was carried out using a Thomas‐Swan low‐pressure (LP) metalorganic chemical vapor deposition (MOCVD) system. Detailed material growth, characterization, and device fabrication have been presented in the study by Shi et al [ 6 ] Figure shows the global cross‐sectional scanning transmission electron microscopy (STEM) image of the 3.95 μm‐thick InP buffer grown on V‐groove‐patterned (001) Si substrate, inserted with GaAs intermediate buffer and multiple stacks of In 0.71 Ga 0.29 As/InP strained‐layer superlattices (SLSs).…”

Section: Lasing Characteristicsmentioning

confidence: 99%

“…Instead, a III–V buffer thickness less than 7 μm is desirable for integration into a silicon photonics (SiPh) process, without any crack formation on the surface. [ 6,7 ] Notable progress has been made with bonding methodologies, where light is evanescently coupled into the Si waveguide beneath the III–V active region. [ 8,9 ] Limitations for such heterogeneous integration approaches include the requirement of precise waveguide alignment and narrow taper formation.…”

Section: Introductionmentioning

confidence: 99%

“…Herein, we report an extended study on the impact of dislocations on the dynamic lasing characteristics and device reliability for the quantum well (QW) lasers grown on Si, in addition to our previously reported static lasing performance including light–current–voltage (LIV) characteristics, thermal impedance, and threshold temperature dependence. [ 6 ] A maximum modulation bandwidth of 5.3 GHz was measured for the lasers on Si, nearly half of the value on InP substrate. Low‐temperature CW aging and high‐temperature‐pulsed aging conditions were both applied to the Si‐based lasers, suggesting that the high junction temperature limits the device lifetime.…”

Section: Introductionmentioning

confidence: 99%

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Lasing Characteristics and Reliability of 1550 nm Laser Diodes Monolithically Grown on Silicon

Shi

Pinna

Zhao

et al. 2020

Physica Status Solidi (a)

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Room‐temperature continuous wave (RT‐CW) electrically pumped 1550 nm indium phosphide (InP)‐based laser diodes are realized on complementary metal‐oxide‐semiconductor (CMOS) compatible silicon (Si) substrates by direct heteroepitaxy. Dynamic properties are investigated by gain switching and small signal modulation measurements. A maximum 3 dB bandwidth of 5.3 GHz is demonstrated, along with a narrow optical pulse with a width of 1.5 ns. The dark current density of 490 mA cm−2 at −1 V bias is an order of magnitude higher than identical devices grown and fabricated on native InP substrates. Also, reliability measurements and failure analysis are carried out for the lasers on Si. The lasers operate stably over 200 hours (h) at 10 °C under CW operation without apparent change in threshold or output power. In sharp contrast, a rapid failure occurs at 60 °C under pulsed operation following 5.6 h of aging. To further improve device characteristics for lasers on Si, the dislocation density of the InP template is reduced by introducing a 2 μm‐thick compositionally graded In0.4Ga0.6 As buffer. The resulting surface defect density is as low as 4.5 × 107 cm−2, which is expected to improve the performance and reliability of long wavelength lasers grown directly on Si.

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Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

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Continuous-wave electrically pumped 1550 nm lasers epitaxially grown on on-axis (001) silicon

Cited by 43 publications

References 42 publications

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Lasing Characteristics and Reliability of 1550 nm Laser Diodes Monolithically Grown on Silicon

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

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