2008
DOI: 10.1364/ol.33.001705
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Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB_6O_10 in an external resonator

Abstract: We report an all-solid-state laser system that generates over 200 mW cw at 244 nm. An optically pumped semiconductor laser is internally frequency doubled to 488 nm. The 488 nm output is coupled to an external resonator, where it is converted to 244 nm using a CsLiB(6)O(10) (CLBO) crystal. The output power is limited by the available power at 488 nm, and no noticeable degradation in output power was observed over a period of several hours.

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Cited by 75 publications
(28 citation statements)
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“…Using a frequency doubling cavity (commercially available), over 500 mW between 450 and 600 nm can be produced. With a second stage of frequency doubling over 200 mW between 225 and 300 nm can be achieved [92,93].…”
Section: Chaptermentioning
confidence: 99%
“…Using a frequency doubling cavity (commercially available), over 500 mW between 450 and 600 nm can be produced. With a second stage of frequency doubling over 200 mW between 225 and 300 nm can be achieved [92,93].…”
Section: Chaptermentioning
confidence: 99%
“…Additional components may be required to realize unidirectional cavities. The resonator for intra-cavity frequency conversion also contains the laser gain medium (right, printed with permission from [176]). In our example a semiconductor laser chip is optically pumped by an external laser diode and then frequency converted using a lithium triborate (LBO) crystal.…”
Section: Near-infrared Systems For Diffuse Spectroscopy and Imagingmentioning
confidence: 99%
“…More than 200 mW continuous wave output power was achieved at 244 nm for 6 W of pump power from an 808 nm laser diode [134]. We note that a similar setup producing more than 1 W of output power at 244 nm has also been developed at Coherent Scotland Inc [135].…”
Section: Higher Order Nonlinear Conversionmentioning
confidence: 99%