1950
DOI: 10.1139/cjr50a-043
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Continuous Observations With the Electron Microscope on the Formation of Evaporated Films of Silver, Gold, and Tin

Abstract: A special specimen holder has been constructed for the evaporation of metals within an RCA–EMU electron microscope. This provides continuous observations on the growth of films of the metal. Micrographs are reproduced which illustrate the formation of films of silver, gold, and tin. The results confirm the usually accepted assumptions regarding the formation of nuclei and the growth of aggregates.

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Cited by 30 publications
(3 citation statements)
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“…The genera1 features of the products in all cases show close similarities. Where adequate precautions were taken to exclude moisture, particles usually consisted of cubic crystals of 0.01-5 p diam.9-11 Exposure to moist air resulted in rapid re-crystallization and sintering of particles,7-11 with at least partial modification of the cubic habit, although in one investigation 13 recrystallization and growth of NaC1 particles exposed to moist air apparently produced cubes of greater perfection.…”
Section: Mechanism Of Solidification and The Growth And Evaporation O...mentioning
confidence: 97%
“…The genera1 features of the products in all cases show close similarities. Where adequate precautions were taken to exclude moisture, particles usually consisted of cubic crystals of 0.01-5 p diam.9-11 Exposure to moist air resulted in rapid re-crystallization and sintering of particles,7-11 with at least partial modification of the cubic habit, although in one investigation 13 recrystallization and growth of NaC1 particles exposed to moist air apparently produced cubes of greater perfection.…”
Section: Mechanism Of Solidification and The Growth And Evaporation O...mentioning
confidence: 97%
“…The use of TEM to make in situ study of the growth processes, and thus understand the underlying mechanisms, dates back to McLauchlan, Sennett, and Scott. 4 At that time, fundamental issues of metal epitaxy were of interest, and much valuable work was done under relatively poor vacuum conditions, but with in situ deposition. [5][6][7][8][9][10][11] The molecular beam epitaxy technique has emerged since then as a powerful method for controlled growth of semiconductor films, but requires ultrahigh vacuum ͑UHV͒ conditions and excellent control of surface structure and deposition conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Such a property presents problems in the design of capsules for the 137 CsCl source, because a sufficient volume must be allowed for expansion caused by the phase transformation. Since KC1 may be one of the major impurities in 13 'CsCl, its effects on the phase behavior and other physical properties of CsCl must be determined.…”
Section: Introductionmentioning
confidence: 99%