Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays

Marín, Antonio García; García-Núñez, C.; Rodrı́guez, P.; Shen, Gang; Kim, S M; Kung, Patrick; Piqueras, J.; Pau, J. L.

doi:10.1088/0957-4484/26/11/115502

Cited by 3 publications

(2 citation statements)

References 47 publications

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“…Conventional DEP process comprises the use of an AC signal applied between two electrodes separated a gap distance shorter than the length of the NW, as thoroughly explained elsewhere [16,30]. Briefly, a droplet of NWs in suspension is casted on top of the electrodes gap area (see figure 1).…”

Section: Theory/calculationmentioning

confidence: 99%

“…Moreover, single NW based devices could be particularly interesting for the design of high-performance applications such as single photon detectors or single molecule chemical sensors [29]. Assembly techniques such as dielectrophoresis (DEP) [16,[30][31][32][33][34][35], optoelectronic tweezers (OETs) [36,37], and nano-manipulation [38] have shown high precision at the nanoscale, allowing to trap, place and align single NWs at specific places along a receiver substrate. Indeed, DEP and OET are contact-less based techniques, utilizing electric fields to assemble NWs, drastically reducing the potential risk of structural damage of NWs during their manipulation.…”

Section: Introductionmentioning

confidence: 99%

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Single GaAs nanowire based photodetector fabricated by dielectrophoresis

et al. 2020

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Mechanical manipulation of nanowires (NWs) for their integration in electronics is still problematic because of their reduced dimensions, risking to produce mechanical damage to the NW structure and electronic properties during the assembly process. In this regard, contactless NW manipulation based methods using non-uniform electric fields, like dielectrophoresis (DEP) are usually much softer than mechanical methods, offering a less destructive alternative for integrating nanostructures in electronic devices. Here, we report a feasible and reproducible dielectrophoretic method to assemble single GaAs NWs (with radius 35–50 nm, and lengths 3–5 μm) on conductive electrodes layout with assembly yields above 90% per site, and alignment yields of 95%. The electrical characteristics of the dielectrophoretic contact formed between a GaAs NW and conductive electrodes have been measured, observing Schottky barrier like contacts. Our results also show the fast fabrication of diodes with rectifying characteristics due to the formation of a low-resistance contact between the Ga catalytic droplet at the tip of the NW when using Al doped ZnO as electrode. The current-voltage characteristics of a single Ga-terminated GaAs NW measured in dark and under illumination exhibit a strong sensitivity to visible light under forward bias conditions (around two orders of magnitude), mainly produced by a change on the series resistance of the device.

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Section: Theory/calculationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Single GaAs nanowire based photodetector fabricated by dielectrophoresis

et al. 2020

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Integration Techniques for Micro/Nanostructure-Based Large-Area Electronics

García-Núñez

Liu

et al. 2018

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Advanced nanostructured materials such as organic and inorganic micro/nanostructures are excellent building blocks for electronics, optoelectronics, sensing, and photovoltaics because of their high-crystallinity, long aspect-ratio, high surface-to-volume ratio, and low dimensionality. However, their assembly over large areas and integration in functional circuits are a matter of intensive investigation. This Element provides detailed description of various technologies to realize micro/nanostructures based large-area electronics (LAE) devices on rigid or flexible/stretchable substrates. The first section of this Element provides an introduction to the state-of-the-art integration techniques used to fabricate LAE devices based on different kind of micro/nanostructures. The second section describes inorganic and organic micro/nanostructures, including most common and promising synthesis procedures. In the third section,different techniques are explained that have great potential for integration of micro/nanostructures over large areas. Finally, the fourth section summarizes important remarks about LAE devices based on micro/nanostructures, and future directions.

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ZnO Nanowires-Based Flexible UV Photodetector System for Wearable Dosimetry

et al. 2018

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This paper presents a flexible ultraviolet (UV) photodetector (PD) system based on zinc oxide (ZnO) nanowires (NWs) for wearable UV dosimetry. High-crystal quality ZnO NWs have been synthesized by chemical vapour transport (CVT) technique on c-plane sapphire substrates, and thereafter, transferred and aligned at pre-defined locations on a flexible substrate using dielectrophoresis (DEP). The accurate control over DEP parameters permitted the fabrication of large-area (wafer scale) arrays of ZnO NWs based UV PDs. Resulting PDs showed photocurrent-to-dark current ratios above 10 3 %, fast response times (<1 s), high sensitivity to different UV light intensities, and good stability under several UV/dark irradiation cycles. In addition, above PDs presented a robust response under extreme bending conditions, which is critical for their application in high-performance wearable UV dosimeters.

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Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays

Abstract: Esta es la versión de autor del artículo publicado en: This is an author produced version of a paper published in:

Cited by 3 publications

References 47 publications

Single GaAs nanowire based photodetector fabricated by dielectrophoresis

Single GaAs nanowire based photodetector fabricated by dielectrophoresis

Integration Techniques for Micro/Nanostructure-Based Large-Area Electronics

ZnO Nanowires-Based Flexible UV Photodetector System for Wearable Dosimetry

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