Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures

Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering

“…Recent applications include the identification of defective batches and the prediction of ultimate performance of solar cells, 14 the prediction of energy levels and lasing wavelength in modern laser heterostructures 16,67 and the assessment of bandgap narrowing and ultimate gain of heterojunction bipolar transistors. 15,68 As an example of such studies, consider the recent characterization of an InGaAs/GaAs/AlGaAs vertical cavity surface-emitting laser, as shown in Fig. 11.…”

Characterization of vertical‐cavity surface‐emitting laser structures by modulation spectroscopy: A status report

“…2(a) can also be understood in more detail on the basis of the above model. For this sample we find that QW C G G , consequently, the changes of the complex dielectric function, 1 e D and 2 e D are relatively smooth functions of energy compared to the sharp cavity-mode related features in the Seraphin coefficients. The main modulation mechanism in a PR or CER experiment for the electron and hole ground states of the QW in the active region (between which the lowest QW transition occurs) is the quantum confined Stark effect.…”

“…The above expressions for a and b essentially represent the effect of the modulation in the energy position and depth, respectively, of the cavity mode in the reflectance spectrum, due to the corresponding modulation of the refractive index (i.e. 1 R a e µ ∂ /∂ ) and absorption coefficient (i.e. D , in the vicinity of a QW transition are commonly described by derivative like Lorentzian or Gaussian oscillators [21].…”

“…The characterization of quantum wells (QWs) in the active region of vertical-cavity surface-emitting laser (VCSEL) devices has become a major issue in device characterization [1]. The problem to overcome is that photoluminescence (PL) measurements commonly applied in industry for QW characterization in device structures (i.e.…”

Photoreflectance and contactless electroreflectance spectroscopy of GaAs-based structures: The below band gap oscillation features

“…Photoreflectance (PR) and contactless electro-reflectance (CER) spectroscopies are known to be powerful techniques for the characterization of semiconductors and their microstructures because they are very sensitive at room temperature, a very important aspect of material characterization since devices normally operate around room temperature [1][2][3][4]. PR and CER are particularly useful because they are performed in contactless mode that is non-destructive for samples.…”