Contactless determination of doping concentration and resistivity of silicon wafers with cavity ring-down technique

Wang, Qian; Zhang, Chunyu; Du, Yang; Liu, Rong; Tan, Linqiu; Liu, Weiguo

doi:10.1016/j.rinp.2020.102939

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2022

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“…The doping concentration (Nd) is traditionally determined using the four-point probe method and eddy current mapping [34][35]. The four-point probe technique is used to determine resistivity here, while the hot point technique is used to determine the type of majority carriers for each produced layer.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effect of feeding flow rate on characteristics of CuInSe2 films prepared by flash evaporation

2022

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Copper indium selenide CuInSe2 (CISe) is one of the most promising absorber materials in high efficiency heterojunction thin-film solar cells due to its high conversion efficiency and known high stability. This paper describes a simple method for preparing CuInSe2 films from pre-prepared CuInSe2 ingot powder using a flash evaporation method. The primary goal of this work is to investigate the effect of feeding flow rate on CuInSe2 film characteristics. The powder feeding flow rate into the evaporator has been adjusted to control the film growth rate. Structure, composition, morphology, electrical and optical properties have all been studied for films deposited at different feeding flow rates. The results show that varying the feeding flow rate affects film characteristics, and that lower feeding rates yield films with better characteristics, which should be considered in future semiconductor film processing.

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Section: Electrical Propertiesmentioning

confidence: 99%